Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface

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dc.creatorCintia Lima Pereira
dc.creatorAlisson Ronieri Cadore
dc.creatorNatália Pereira Rezende
dc.creatorAndreij de Carvalho Gadelha
dc.creatorEdmar Avellar Soares
dc.creatorHelio Chacham
dc.creatorLeonardo Cristiano Campos
dc.creatorRodrigo Gribel Lacerda
dc.date.accessioned2024-01-01T12:12:29Z
dc.date.accessioned2025-09-08T23:39:29Z
dc.date.available2024-01-01T12:12:29Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ab0b23
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/62215
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectHidrogênio
dc.subjectGrafeno
dc.subject.otherMolecular hydrogen
dc.subject.otherHeterojunction
dc.subject.otherGraphene sensor
dc.subject.otherGraphene interface
dc.titleReversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
dc.typeArtigo de periódico
local.citation.epage11
local.citation.issue2
local.citation.spage1
local.citation.volume6
local.description.resumoIn this work, we present an investigation regarding how and why molecular hydrogen (H2) changes the electronic properties of graphene field effect transistors (GFETs). We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type of metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such a situation, the devices show a second charge neutrality point (CNP) in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0002-9146-733X
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0003-3356-3312
local.identifier.orcidhttps://orcid.org/0000-0001-5041-9094
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.identifier.orcidhttps://orcid.org/0000-0003-4777-7370
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ab0b23

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