Inner-and outer-wall sorting of double-walled carbon nanotubes

dc.creatorHan Li
dc.creatorBenjamin Scott Flavel
dc.creatorGeorgy Gordeev
dc.creatorSören Wasserroth
dc.creatorVenkata Sai Kiran Chakravadhanula
dc.creatorChethala Neelakandhan Shyam Kumar
dc.creatorFrank Hennrich
dc.creatorAdo Jorio de Vasconcelos
dc.creatorStephanie Reich
dc.creatorRalph Krupke
dc.date.accessioned2022-06-08T15:40:47Z
dc.date.accessioned2025-09-09T00:31:18Z
dc.date.available2022-06-08T15:40:47Z
dc.date.issued2017-10-02
dc.identifier.doihttps://doi.org/10.1038/nnano.2017.207
dc.identifier.issn1748-3395
dc.identifier.urihttps://hdl.handle.net/1843/42361
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNature Nanotechnology
dc.rightsAcesso Restrito
dc.subjectNanotubos de carbono de paredes múltiplas
dc.subjectEspectroscopia de Raman
dc.subject.otherDouble wall carbon nanotube
dc.subject.otherNanotube separation
dc.subject.otherRaman spectroscopy
dc.titleInner-and outer-wall sorting of double-walled carbon nanotubes
dc.typeArtigo de periódico
local.citation.epage1182
local.citation.spage1176
local.citation.volume12
local.description.resumoDouble-walled carbon nanotubes (DWCNTs) consist of two coaxially aligned single-walled carbon nanotubes (SWCNTs), and previous sorting methods only achieved outer-wall electronic-type selectivity. Here, a separation technique capable of sorting DWCNTs by semiconducting (S) or metallic (M) inner- and outer-wall electronic type is presented. Electronic coupling between the inner and outer wall is used to alter the surfactant coating around each of the DWCNT types, and aqueous gel permeation is used to separate them. Aqueous methods are used to remove SWCNT species from the raw material and prepare enriched DWCNT fractions. The enriched DWCNT fractions are then transferred into either chlorobenzene or toluene using the copolymer PFO–BPy to yield the four inner@outer combinations of M@M, M@S, S@M and S@S. The high purity of the resulting fractions is verified by absorption measurements, transmission electron microscopy, atomic force microscopy, resonance Raman mapping and high-density field-effect transistor devices.
local.identifier.orcidhttps://orcid.org/0000-0002-3273-2105
local.identifier.orcidhttps://orcid.org/0000-0002-3645-5969
local.identifier.orcidhttps://orcid.org/0000-0002-7413-1199
local.identifier.orcidhttps://orcid.org/0000-0003-4860-5327
local.identifier.orcidhttps://orcid.org/0000-0001-5317-669X
local.identifier.orcidhttps://orcid.org/0000-0002-5978-2735
local.identifier.orcidhttps://orcid.org/0000-0002-2391-0256
local.identifier.orcidhttps://orcid.org/0000-0001-8427-8592
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.nature.com/articles/nnano.2017.207

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