Thermally activated hysteresis in high quality graphene/ h-BN devices

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dc.creatorAlisson Ronieri Cadore
dc.creatorEdrian Mania
dc.creatorKenji Watanabe
dc.creatorTakashi Taniguchi
dc.creatorRodrigo Gribel Lacerda
dc.creatorLeonardo Cristiano Campos
dc.date.accessioned2025-02-23T14:24:51Z
dc.date.accessioned2025-09-09T01:03:19Z
dc.date.available2025-02-23T14:24:51Z
dc.date.issued2016
dc.identifier.doihttps://doi.org/10.1063/1.4953162
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1843/80323
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Restrito
dc.subjectSemicondutores
dc.subjectGrafeno
dc.subject.otherSemiconductors
dc.subject.otherTransconductance
dc.subject.otherDigital circuits
dc.subject.otherElectrical properties and parameters
dc.subject.otherField effect transistors
dc.subject.otherHeterostructures
dc.subject.otherGraphene
dc.subject.otherMagnetic hysteresis
dc.subject.otherCarbon based materials
dc.subject.otherMemory device
dc.titleThermally activated hysteresis in high quality graphene/ h-BN devices
dc.typeArtigo de periódico
local.citation.issue23
local.citation.volume108
local.description.resumoWe report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO2/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenological model which captures all of our findings based on charges trapped at the h-BN/SiO2 interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0003-3701-8119
local.identifier.orcidhttps://orcid.org/0000-0003-4777-7370
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.aip.org/aip/apl/article-abstract/108/23/233101/311707/Thermally-activated-hysteresis-in-high-quality?redirectedFrom=fulltext

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