Tailoring resistive switching properties of TiO2 with controlled incorporation of oxide nanoparticles

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dc.creatorAlejandro Cristians Rios Cuadros
dc.creatorRodrigo Ribeiro de Andrade
dc.creatorLuciano Andrey Montoro
dc.creatorÂngelo Malachias de Souza
dc.creatorLorena Aarão Rodrigues
dc.creatorAlisson Ronieri Cadore
dc.date.accessioned2023-04-04T12:39:36Z
dc.date.accessioned2025-09-08T23:32:34Z
dc.date.available2023-04-04T12:39:36Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1088/2053-1591/3/8/085024
dc.identifier.issn2053-1591
dc.identifier.urihttps://hdl.handle.net/1843/51532
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofMaterials Research Express
dc.rightsAcesso Restrito
dc.subjectNanopartículas
dc.subjectMicroscopia eletrônica de transmissão
dc.subjectDióxido de titânio
dc.subject.otherResistive switching
dc.subject.otherNanoparticles
dc.subject.otherTransmission electron microscopy
dc.titleTailoring resistive switching properties of TiO2 with controlled incorporation of oxide nanoparticles
dc.typeArtigo de periódico
local.citation.epage13
local.citation.issue8
local.citation.spage1
local.citation.volume3
local.description.resumoReversible resistance states were extensively observed in thin film systems, and their physical properties were in most cases determined by the electric behavior of the dielectric layer placed between contacts. Here we include SnO2 nanoparticles on TiO2 dielectric films, inducing modifications of the resistive switching behavior. We show that the choice of oxide nanoparticles with dielectric constant smaller than the dielectric constant of the main oxide film guides conductive channels, increasing the extension of the Fowler–Nordheim (tunneling) conduction regime during their electroforming as the density of nanoparticles rises. It is found that the SnO2 nanoparticles show reduced impact on the resistive switching response of devices produced following this methodology. The formation of Ti4O7 conductive channels is discussed based on electric measurements as well as on scanning probe and electron microscopy techniques.
local.identifier.orcidhttps://orcid.org/0000-0003-4682-6169
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0002-5157-3971
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.publisher.countryBrasil
local.publisher.departmentCMI - CENTRO DE MICROSCOPIA
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.departmentICX - DEPARTAMENTO DE QUÍMICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1591/3/8/085024

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