Reconfiguration of amorphous complex oxides: a route to a broad range of assembly phenomena, hybrid materials, and novel functionalities

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dc.creatorDivya J. Prakash
dc.creatorKaddour Lekhal
dc.creatorIzabela Szlufarska
dc.creatorPaul Gregory Evans
dc.creatorFrancesca Cavallo
dc.creatorYajin Chen
dc.creatorMengistie Leweyehu Debasu
dc.creatorDonald E. Savage
dc.creatorChaiyapat Tangpatjaroen
dc.creatorChristoph Friedrich Deneke
dc.creatorÂngelo Malachias de Souza
dc.creatorAdam D. Alfieri
dc.creatorOmar Elleuch
dc.date.accessioned2023-06-05T14:59:16Z
dc.date.accessioned2025-09-08T23:46:02Z
dc.date.available2023-06-05T14:59:16Z
dc.date.issued2021
dc.identifier.doihttps://doi.org/10.1002/smll.202105424
dc.identifier.issn1613-6829
dc.identifier.urihttps://hdl.handle.net/1843/54501
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofSmall
dc.rightsAcesso Restrito
dc.subjectÓxidos
dc.subjectNanomembranas
dc.subject.otherComplex oxides
dc.subject.otherMetastable stressors
dc.subject.otherNanomembranes
dc.titleReconfiguration of amorphous complex oxides: a route to a broad range of assembly phenomena, hybrid materials, and novel functionalities
dc.typeArtigo de periódico
local.citation.epage14
local.citation.issue1
local.citation.spage1
local.citation.volume18
local.description.resumoReconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO3 layer on a Si:B/Si1- x Gex :B heterostructure is reconfigured at the atomic scale upon heating, exhibiting a change in volume of ≈2% and accompanying biaxial stress. The Si:B/Si1- x Gex :B bilayer is fabricated by molecular beam epitaxy, followed by sputter deposition of SrTiO3 at room temperature. The processes yield a hybrid oxide/semiconductor nanomembrane. Upon release from the substrate, the nanomembrane rolls up and has a curvature determined by the stress in the epitaxially grown Si:B/Si1- x Gex :B heterostructure. Heating to 600 °C leads to a decrease of the radius of curvature consistent with the development of a large compressive biaxial stress during the reconfiguration of SrTiO3 . The control of stresses via post-deposition processing provides a new route to the assembly of complex-oxide-based heterostructures in 3D geometry. The reconfiguration of metastable mechanical stressors enables i) synthesis of various types of strained superlattice structures that cannot be fabricated by direct growth and ii) technologies based on strain engineering of complex oxides via highly scalable lithographic processes and on large-area semiconductor substrates.
local.identifier.orcidhttps://orcid.org/0000-0003-2516-9665
local.identifier.orcidhttps://orcid.org/0000-0001-8515-4196
local.identifier.orcidhttps://orcid.org/0000-0002-8556-386X
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0002-1185-981X
local.identifier.orcidhttps://orcid.org/0000-0003-4908-2062
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://onlinelibrary.wiley.com/doi/10.1002/smll.202105424

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