Origin of the complex Raman tensor elements in single-layer triclinic ReSe2

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dc.creatorGeovani Carvalho de Resende
dc.creatorCristiano Fantini Leite
dc.creatorBruno Ricardo de Carvalho
dc.creatorMarcos Assunção Pimenta
dc.creatorGuilherme Almeida Silva Ribeiro
dc.creatorOrlando José Silveira Júnior
dc.creatorJéssica Santos Lemos
dc.creatorJuliana Caldeira Brant
dc.creatorDaniel A. Rhodes
dc.creatorLuis Molinuevo Balicas
dc.creatorMauricio Terrones Maldonado
dc.creatorMario Sergio de Carvalho Mazzoni
dc.date.accessioned2025-07-14T19:12:43Z
dc.date.accessioned2025-09-09T00:34:07Z
dc.date.available2025-07-14T19:12:43Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/abce07
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/83559
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectNanomateriais
dc.subjectEspectroscopia de Raman
dc.subjectFônons
dc.subject.otherRaman spectroscopy
dc.subject.otherRaman tensor
dc.subject.otherElectron–phonon coupling
dc.subject.otherBand structure
dc.subject.otherPhonon
dc.subject.otherTransition metal dichalcogenides
dc.titleOrigin of the complex Raman tensor elements in single-layer triclinic ReSe2
dc.typeArtigo de periódico
local.citation.epage11
local.citation.issue2
local.citation.spage1
local.citation.volume8
local.description.resumoLow symmetry 2D materials offer an alternative for the fabrication of optoelectronic devices which are sensitive to light polarization. The investigation of electron–phonon interactions in these materials is essential since they affect the electrical conductivity. Raman scattering probes light–matter and electron–phonon interactions, and their anisotropies are described by the Raman tensor. The tensor elements can have complex values, but the origin of this behavior in 2D materials is not yet well established. In this work, we studied a single-layer triclinic ReSe2 by angle-dependent polarized Raman spectroscopy. The obtained values of the Raman tensor elements for each mode can be understood by considering a new coordinate system, which determines the physical origin of the complex nature of the Raman tensor elements. Our results are explained in terms of anisotropy of the electron–phonon coupling relevant to the engineering of new optoelectronic devices based on low-symmetry 2D materials.
local.identifier.orcidhttps://orcid.org/0000-0003-4419-9448
local.identifier.orcidhttps://orcid.org/0000-0003-0436-7857
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0002-3389-0682
local.identifier.orcidhttps://orcid.org/0000-0002-4050-9560
local.identifier.orcidhttps://orcid.org/0000-0002-0403-9485
local.identifier.orcidhttps://orcid.org/0000-0002-9493-9240
local.identifier.orcidhttps://orcid.org/0000-0002-8931-3403
local.identifier.orcidhttps://orcid.org/0000-0002-7651-3211
local.identifier.orcidhttps://orcid.org/0000-0002-5209-0293
local.identifier.orcidhttps://orcid.org/0000-0003-0010-2851
local.identifier.orcidhttps://orcid.org/0000-0001-5897-6936
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/abce07

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