Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

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dc.creatorAndreij de Carvalho Gadelha
dc.creatorRafael Battistella Nadas
dc.creatorTiago Campolina Barbosa
dc.creatorKenji Watanabe
dc.creatorTakashi Taniguchi
dc.creatorLeonardo Cristiano Campos
dc.creatorMarkus B. Raschke
dc.creatorAdo Jorio de Vasconcelos
dc.date.accessioned2025-02-23T17:55:03Z
dc.date.accessioned2025-09-09T01:28:58Z
dc.date.available2025-02-23T17:55:03Z
dc.date.issued2022
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ac8e7f
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/80340
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectGrafeno
dc.subjectEfeito de Raman
dc.subjectOptoeletrônica
dc.subject.otherDevices
dc.subject.otherRoom temperature
dc.subject.otherGraphene
dc.subject.otherPhotodoping
dc.subject.otherRaman
dc.subject.otherOptoelectronics
dc.subject.otherKohn-anomaly
dc.titleObservation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature
dc.typeArtigo de periódico
local.citation.epage5
local.citation.issue4
local.citation.spage1
local.citation.volume9
local.description.resumoDue to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born–Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride substrate and gated with an ultra-thin gold layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture, by decoupling graphene optoelectronic properties from the substrate effects, allows for observing quantum phenomena at room temperature.
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0001-6165-5981
local.identifier.orcidhttps://orcid.org/0000-0001-6303-4222
local.identifier.orcidhttps://orcid.org/0000-0003-3701-8119
local.identifier.orcidhttps://orcid.org/0000-0002-1467-3105
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.identifier.orcidhttps://orcid.org/0000-0003-2822-851X
local.identifier.orcidhttps://orcid.org/0000-0002-5978-2735
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ac8e7f

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