Revealing atomically sharp interfaces of two-dimensional lateral heterostructures by second harmonic generation

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dc.creatorFrederico Barros de Sousa
dc.creatorLucas Lafetá Prates da Fonseca
dc.creatorAlisson Ronieri Cadore
dc.creatorPrasana Kumar Sahoo
dc.creatorLeandro Malard Moreira
dc.date.accessioned2025-02-25T13:13:15Z
dc.date.accessioned2025-09-08T23:53:55Z
dc.date.available2025-02-25T13:13:15Z
dc.date.issued2021
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ac0731
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/80406
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectÓptica não-linear
dc.subject.otherTwo-dimensional materials
dc.subject.otherTansition metal dichalcogenides
dc.subject.otherVan der Waals heterostructures
dc.subject.otherNonlinear optics
dc.subject.otherSecond harmonic generation
dc.titleRevealing atomically sharp interfaces of two-dimensional lateral heterostructures by second harmonic generation
dc.typeArtigo de periódico
local.citation.epage7
local.citation.issue3
local.citation.spage1
local.citation.volume8
local.description.resumoThe interface between two different semiconductors is crucial in determining the electronic properties at the heterojunction, therefore novel techniques that can probe these regions are of particular interest. Recently it has been shown that heterojunctions of two-dimensional transition metal dichalcogenides have sharp and epitaxial interfaces that can be used to the next generation of flexible and on chip optoelectronic devices. Here, we show that second harmonic generation (SHG) can be used as an optical tool to reveal these atomically sharp interfaces in different lateral heterostructures. We observed an enhancement of the SH intensity at the heterojunctions, and showed that is due to a coherent superposition of the SH emission from each material. This constructive interference pattern reveals a phase difference arising from the distinct second-order susceptibilities of both materials at the interface. Our results demonstrate that SHG microscopy is a sensitive characterization technique to unveil nanometric features in layered materials and their heterostructures.
local.identifier.orcidhttps://orcid.org/0000-0001-7974-9548
local.identifier.orcidhttps://orcid.org/0000-0002-1594-9142
local.identifier.orcidhttps://orcid.org/0000-0001-6316-7842
local.identifier.orcidhttps://orcid.org/0000-0003-4207-9653
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ac0731

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