Growth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells

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dc.creatorSantunu Ghosh
dc.creatorMarcus Vinicius Baeta Moreira
dc.creatorCristiano Fantini Leite
dc.creatorJuan Carlos González Pérez
dc.date.accessioned2025-02-25T13:23:03Z
dc.date.accessioned2025-09-09T00:05:04Z
dc.date.available2025-02-25T13:23:03Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.identifier.doihttps://doi.org/10.1016/j.solener.2020.10.001
dc.identifier.issn1471-1257
dc.identifier.urihttps://hdl.handle.net/1843/80407
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofSolar Energy
dc.rightsAcesso Restrito
dc.subjectCélulas solares
dc.subjectFilmes finos
dc.subject.otherSolar cells
dc.subject.otherThin films
dc.subject.otherOptical band gap
dc.subject.otherUrbach energy
dc.subject.otherDefects
dc.titleGrowth and optical properties of nanocrystalline Sb2Se3 thin-films for the application in solar-cells
dc.typeArtigo de periódico
local.citation.epage621
local.citation.spage613
local.citation.volume211
local.description.resumoAntimony selenide (Sb2Se3) is a promising material for thin-film solar-cells due to its attractive optoelectronic properties with the desirable band gap. In the present work, four different Sb2Se3 films were grown on Si/SiO2 (1 0 0) substrates at ambient temperature using ultra-high vacuum molecular beam evaporation technique and different evaporation temperatures. The compositional analysis with the help of wavelength-dispersive X-ray spectroscopy measurements demonstrate that there is a loss of Se in the as-deposited samples. However, the X-ray diffraction study indicates that the as-deposited films are nanocrystalline in nature, with average crystallite size slightly increasing with the evaporation temperature. The blue shift of Raman peaks with the increase of evaporation temperature indicates the possibility of the presence of small amount of compressive strain in the crystal lattice and it appears because of the anion vacancy (VSe) due to the loss of Se. The obtained band gap value ranges from 1.075 eV to 1.21 eV, which indicate that the as-deposited nanocrystalline Sb2Se3 films are suitable for application in thin-film photovoltaic solar-cells. The tuning of the band-gap with the evaporation temperature opens a new road to optimize the device efficiency for the low-cost thin-film photovoltaics.
local.identifier.orcidhttps://orcid.org/0000-0003-0436-7857
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0038092X20310513?via%3Dihub

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