Estados magnéticos itinerantes em interfaces de heteroestruturas bi-dimensionais laterais de grafeno e nitreto de boro

Abstract

The prominence and growing interest in two-dimensional materials, such as graphene and hexagonal boron nitride (h-BN), arise from their unique properties and potential applications in areas such as transistors and sensors. These materials offer flexibility in semiconductor modulation and possess a large surface contact area. Manipulation methods, such as the application of strain and the insertion or removal of atoms, allow their properties to be tuned. Understanding interfaces in heterostructures is crucial, as they influence transport properties and device performance. The present study investigates the electronic characteristics of a graphene/h-BN heterostructure, revealing the presence of magnetic states, mainly at the interfaces and edges of the materials. Carbon atoms at the interface play a significant role in the electronic states near the Fermi level. These results are fundamental for understanding the properties of these heterostructures and may guide future applications in electronic and magnetic devices.