Impact of NBTI on increasing the susceptibility of FinFET to radiation

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dc.creatorFrank Sill Torres
dc.creatorHussam Amrouch
dc.creatorJorg Henke
dc.creatorRolf Drechsler
dc.date.accessioned2025-05-13T15:19:21Z
dc.date.accessioned2025-09-08T23:58:13Z
dc.date.available2025-05-13T15:19:21Z
dc.date.issued2019
dc.identifier.doi10.1109/IRPS.2019.8720468
dc.identifier.urihttps://hdl.handle.net/1843/82233
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofIEEE International Reliability Physics Symposium (IRPS)
dc.rightsAcesso Restrito
dc.subjectCircuitos integrados
dc.subject.otherNegative bias temperature instability , Thermal variables control , Inverters , Ions , Circuit faults , FinFETs , Load modeling
dc.subject.otherNBTI , Aging , Radiation , Soft-Errors , TCAD , FinFET , Reliability
dc.subject.otherNegative Bias Temperature Instability , Effects Of Radiation , Account In Order , Trapping , Voltage Drop , Heavy Ions , Error Detection , Particle Tracking , Purple Line , Drain Current , Linear Energy Transfer , Inverter Output , Interface Trap , Fresh State , Concurrent Detection , Transient Faults
dc.titleImpact of NBTI on increasing the susceptibility of FinFET to radiation
dc.typeArtigo de evento
local.citation.spage1
local.description.resumoThis work investigates the interaction between Neg-ative Bias Temperature Instability (NBTI)and radiation effects in 14nm FinFET devices. Due to the complex interaction between traps generated by NBTI and induced charges by strikes of ionizing particles, we opted for a complete physical-based analysis using TCAD mixed-mode simulations. This enables an accurate estimation and then modeling of the duration a circuit requires to recover from a particle strike and, thus, return to correct operation under the effects of NBTI. This a crucial aspect, because the longer the recovery time, the higher the probabilities of a soft-error and that this error remains undetected. Further, our employed setup enables an accurate determination of the critical charge (Qcrit), i. e. the minimum collected charge that results into a faulty transition of a circuit's output node. Our investigation reveals that there is indeed a strong relation between NBTI and the time a circuit remains in faulty state. Consequently, detection schemes must be adapted during circuit's operation to take aging into account in order to avoid that errors remain undetected.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/8720468

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