Passivation of interfaces in thin film solar cells: understanding the effects of a nanostructured rear point contact layer

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dc.creatorPedro M. P. Salomé
dc.creatorElvira Maria Correia Fortunato
dc.creatorRodrigo Ferrão de Paiva Martins
dc.creatorJuan Carlos González Pérez
dc.creatorJoaquim Fernando Monteiro de Carvalho Pratas Leitão
dc.creatorPaulo A. Fernandes
dc.creatorMarika Edoff
dc.creatorSascha Sadewasser
dc.creatorBart Vermang
dc.creatorRodrigo Ribeiro de Andrade
dc.creatorJennifer Cláudia Passos Teixeira
dc.creatorJosé Miguel Vaz da Cunha
dc.creatorManuel João de Moura Dias Mendes
dc.creatorSirazul Haque
dc.creatorJêrome Borme
dc.creatorHugo Manuel Brito Águas
dc.date.accessioned2024-02-21T14:59:58Z
dc.date.accessioned2025-09-08T23:06:46Z
dc.date.available2024-02-21T14:59:58Z
dc.date.issued2018
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1002/admi.201701101
dc.identifier.issn2196-7350
dc.identifier.urihttps://hdl.handle.net/1843/64385
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofAdvanced Materials Interfaces
dc.rightsAcesso Restrito
dc.subjectCélulas solares
dc.subjectFilmes finos
dc.subject.otherSolar cells
dc.subject.otherThin films
dc.titlePassivation of interfaces in thin film solar cells: understanding the effects of a nanostructured rear point contact layer
dc.typeArtigo de periódico
local.citation.epage10
local.citation.issue2
local.citation.spage1
local.citation.volume5
local.description.resumoThin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.
local.identifier.orcidhttps://orcid.org/0000-0002-1050-2958
local.identifier.orcidhttps://orcid.org/0000-0002-4202-7047
local.identifier.orcidhttps://orcid.org/0000-0002-1997-7669
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0001-8131-3313
local.identifier.orcidhttps://orcid.org/0000-0003-4111-4613
local.identifier.orcidhttps://orcid.org/0000-0001-8384-6025
local.identifier.orcidhttps://orcid.org/0000-0003-2669-2087
local.identifier.orcidhttps://orcid.org/0000-0002-3155-6832
local.identifier.orcidhttps://orcid.org/0000-0002-1622-0193
local.identifier.orcidhttps://orcid.org/0000-0002-7374-0726
local.identifier.orcidhttps://orcid.org/0000-0003-4115-4551
local.identifier.orcidhttps://orcid.org/0000-0002-5622-7760
local.identifier.orcidhttps://orcid.org/0000-0001-7350-649X
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://onlinelibrary.wiley.com/doi/full/10.1002/admi.201701101

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