Two-dimensional semiconductors: the case of silver thiolates

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dc.creatorDaniel Vasconcelos Pazzini Massote
dc.creatorMario Sergio de Carvalho Mazzoni
dc.date.accessioned2025-05-13T15:43:59Z
dc.date.accessioned2025-09-09T00:43:01Z
dc.date.available2025-05-13T15:43:59Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1063/1.4963655
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1843/82242
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofApplied physics letters
dc.rightsAcesso Restrito
dc.subjectTeoria do Funcional da Densidade
dc.subjectRede cristalina
dc.subjectSemicondutores
dc.subjectNanotecnologia
dc.subjectMetais de transição
dc.subject.other2D materials
dc.subject.otherLayered compound
dc.subject.otherSilver thiolate
dc.subject.otherDensity functional theory
dc.subject.otherExchange correlation functionals
dc.subject.otherLocal density approximations
dc.subject.otherFirst-principle calculations
dc.subject.otherCrystal lattices
dc.subject.otherSemiconductors
dc.subject.otherStark effect
dc.subject.otherNanotechnology
dc.subject.otherTransition metals
dc.titleTwo-dimensional semiconductors: the case of silver thiolates
dc.typeArtigo de periódico
local.citation.epage133104-4
local.citation.issue13
local.citation.spage133104-1
local.citation.volume109
local.description.resumoIn this work, we apply first-principles calculations to investigate the electronic and structural properties of a layered compound based on the hexagonal arrangement of silver and sulfur atoms, a material that has been already synthesized and crystallographically characterized. We focus on the mono- and multilayer structures derived from the bulk material, showing that they hold great promise in applications related to nanotechnology. In particular, their direct band gaps may be greatly modulated by external fields as a result of a Stark effect, and a semiconductor-metal transition is predicted to take place for field magnitudes significantly smaller than those required to produce the same phenomenology in other nanostructures.
local.identifier.orcidhttps://orcid.org/0000-0001-5897-6936
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.aip.org/aip/apl/article/109/13/133104/32386/Two-dimensional-semiconductors-The-case-of-silver

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