Semicondutores cerâmicos: um estudo estrutural de filmes espessos de CdS

Abstract

In this work we studied thick films of CdS. The samples have been prepared by screen printing and sintering process in air and nitrogen, in the temperature range of 500 °C a 700 °C We used X-Ray Diffraction (XRD) to characterize the films. The films sintered in air present oxidation for temperatures higher than 600°C. The samples sintered in nitrogen do not present oxidation in the temperature range studied. All the films are strained. From the diffraction pick position we measured the strain induced by the stress in the films. The same temperature dependence, for the strain, was observed for the lattice parameters a and c, indicating an isotropic stress. The samples sintered in nitrogen presented the expected elastic behavior for CdS, but the samples sintered in air did not. The grain size could not be obtained from the line width of the diffraction peaks. In this system the grain size and the micro strain contributions to the line width are not independent.