Electrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2

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dc.creatorJosé Roberto de Toledo
dc.creatorRaphaela de Oliveira Gonçalves
dc.creatorPaulo Henrique Faria Vaz
dc.creatorF. D. Brandão
dc.creatorG. M. Ribeiro
dc.creatorJuan Carlos González Pérez
dc.creatorKlaus Wilhelm Heinrich Krambrock
dc.date.accessioned2025-02-25T16:29:01Z
dc.date.accessioned2025-09-08T23:49:28Z
dc.date.available2025-02-25T16:29:01Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1063/1.5091081
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1843/80420
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Restrito
dc.subjectSemicondutores
dc.subject.otherHall effect
dc.subject.otherSemiconductors
dc.subject.otherSpintronic devices
dc.subject.otherElectric measurements
dc.subject.otherAxial symmetry
dc.subject.otherElectron paramagnetic resonance spectroscopy
dc.titleElectrical and structural characterization of shallow As acceptors in natural p-type 2H-MoS2
dc.typeArtigo de periódico
local.citation.epage192103-5
local.citation.issue19
local.citation.spage192103-1
local.citation.volume114
local.description.resumoHexagonal molybdenite (MoS2) is one of the most promising two-dimensional (2D) semiconductors, known with n-type and p-type conduction, with possible applications in electronic, opto-electronic, and spintronic devices. In this work, highly pure geological samples of 2H-MoS2 were investigated by temperature-dependent electron paramagnetic resonance (EPR) and Hall effect measurements. The low-temperature (<55 K) EPR spectra were consistently explained as holes (S ¼ 1/2) trapped on shallow As acceptors on sulfur sites leading to a four-line hyperfine-split spectrum (75 As: I ¼ 3/2, 100%) in axial symmetry and with a concentration of 5(1) ppm ( 2 1017 cm 3 ). Electrical measurements indicate p-type conduction with a free carrier concentration of about 5 1017 cm 3 at room temperature and an ionization energy of 52 meV associated with the shallow As acceptors, which is consistent with the ionization energy determined from the hydrogenic model of shallow acceptors in 2H-MoS2. These values are in strong contrast to the unrealistic value of 0.7 meV reported in the literature obtained from the analysis of temperature-dependent EPR measurements. Possible explanations are related to temperature-dependent spin-lattice relaxation effects, affecting strongly EPR line intensities and making impossible their use in obtaining the ionization energy.
local.identifier.orcidhttps://orcid.org/0000-0001-9785-0279
local.identifier.orcidhttps://orcid.org/0000-0003-1391-6694
local.identifier.orcidhttps://orcid.org/0000-0002-7562-0285
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.aip.org/aip/apl/article/114/19/192103/37332/Electrical-and-structural-characterization-of

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