Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(001) substrates

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dc.creatorLucas Átila Bernardes Marçal
dc.creatorMarie-Ingrid Richard
dc.creatorLuca Persichetti
dc.creatorVincent Favre-Nicolin
dc.creatorHubert Renevier
dc.creatorMassimo Fanfoni
dc.creatorAnna Sgarlata
dc.creatorTobias Ü. Schülli
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-04-06T17:17:05Z
dc.date.accessioned2025-09-08T23:28:58Z
dc.date.available2023-04-06T17:17:05Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.format.mimetypepdf
dc.identifier.doihttps://doi.org/10.1016/j.apsusc.2018.10.094
dc.identifier.issn11873-5584
dc.identifier.urihttps://hdl.handle.net/1843/51695
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofApplied Surface Science
dc.rightsAcesso Aberto
dc.subjectMicroscopia de tunelamento
dc.subjectRaios X
dc.subjectDifração
dc.subject.otherGe islands
dc.subject.otherMiscut
dc.subject.otherFaceting
dc.subject.otherSynchrotron x-ray diffraction
dc.subject.otherFinite elements simulations
dc.titleModified strain and elastic energy behavior of Ge islands formed on high-miscut Si(001) substrates
dc.typeArtigo de periódico
local.citation.epage807
local.citation.spage801
local.citation.volume466
local.description.resumoWe investigate here the influence of Si substrate miscut on the strain and elastic energy of Ge islands. We show how the morphology, composition and the elastic energy for 4 and 13 monolayers (ML) Ge islands grown at 600 °C and 730 °C on vicinal Si(0 0 1) surfaces change with miscut angles ranging between 0° and 10°. Scanning Tunneling Microscopy is used to determine the island morphology. Resonant x-ray diffraction near the Ge-K absorption edge allows the determination of the Ge concentration as well as the elastic energy stored on such structures from their dependency on the lattice parameter. Simulations using the Finite Elements Method indicate that the enlargement of the SiGe broad peak retrieved from the x-ray diffraction measurements is actually caused by the asymmetrical faceting induced by large miscut angles. Such faceting has a strong effect on island density and elastic energy, producing differences that are proportional to those observed in conditions with distinct SiGe content.
local.identifier.orcidhttps://orcid.org/0000-0003-4956-5144
local.identifier.orcidhttps://orcid.org/0000-0002-8172-3141
local.identifier.orcidhttps://orcid.org/0000-0001-6578-254X
local.identifier.orcidhttps://orcid.org/0000-0003-0801-6712
local.identifier.orcidhttps://orcid.org/0000-0002-2317-9344
local.identifier.orcidhttps://orcid.org/0000-0001-9662-0877
local.identifier.orcidhttps://orcid.org/0000-0002-4523-0841
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0169433218327922

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