Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

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dc.creatorRodrigo Ribeiro de Andrade
dc.creatorÂngelo Malachias de Souza
dc.creatorDouglas Rodrigues Miquita
dc.creatorThiago de Lourenço e Vasconcelos
dc.creatorRudy Massami Sakamoto Kawabata
dc.creatorMaurício Pamplona Pires
dc.creatorPatrícia Lustoza de Souza
dc.creatorWagner Nunes Rodrigues
dc.date.accessioned2023-03-08T13:32:07Z
dc.date.accessioned2025-09-09T01:15:29Z
dc.date.available2023-03-08T13:32:07Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.description.sponsorshipFAPERJ - Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro
dc.identifier.doihttps://doi.org/10.1016/j.physe.2016.11.011
dc.identifier.issn1873-1759
dc.identifier.urihttps://hdl.handle.net/1843/50733
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofPhysica E: Low-dimensional Systems and Nanostructures
dc.rightsAcesso Restrito
dc.subjectModelos de crescimento
dc.subjectNanoestrutura
dc.subjectNucleação
dc.subjectDifração de raios X
dc.subject.otherGrowth models
dc.subject.otherNanostructures
dc.subject.otherNucleation
dc.subject.otherX-ray diffraction
dc.subject.otherArsenates
dc.subject.otherMetal-organic vapor phase epitaxy
dc.titleStudy of growth properties of InAs islands on patterned InP substrates defined by focused ion beam
dc.typeArtigo de periódico
local.citation.epage67
local.citation.spage59
local.citation.volume87
local.description.resumoThis work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0001-5319-4652
local.identifier.orcidhttps://orcid.org/0000-0003-0195-444X
local.identifier.orcidhttps://orcid.org/0000-0001-5565-1618
local.identifier.orcidhttps://orcid.org/0000-0001-9664-0181
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S1386947716304428

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