Oxygen intercalated graphene on SiC(0001): multiphase SiOx layer formation and its influence on graphene electronic properties

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dc.creatorIgor de Souza Lana Antoniazzi
dc.creatorRogério Magalhães Paniago
dc.creatorMyriano Henriques de Oliveira Junior
dc.creatorThais Chagas Peixoto Silva
dc.creatorMatheus Josué de Souza Matos
dc.creatorLucas Atila Bernardes Marçal
dc.creatorEdmar Avellar Soares
dc.creatorMário Sérgio de Carvalho Mazzoni
dc.creatorRoberto Hiroki Miwa
dc.creatorJoão Marcelo Jordão Lopes
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-05-29T17:55:31Z
dc.date.accessioned2025-09-09T00:23:07Z
dc.date.available2023-05-29T17:55:31Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1016/j.carbon.2020.05.064
dc.identifier.issn1873-3891
dc.identifier.urihttps://hdl.handle.net/1843/54104
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofCarbon
dc.rightsAcesso Restrito
dc.subjectOxigênio
dc.subjectGrafeno
dc.subject.otherOxygen
dc.subject.otherGraphene
dc.titleOxygen intercalated graphene on SiC(0001): multiphase SiOx layer formation and its influence on graphene electronic properties
dc.typeArtigo de periódico
local.citation.epage759
local.citation.spage746
local.citation.volume167
local.description.resumoLow-dimensionality materials are highly susceptible to interfaces. Indeed, intercalation of different chemical species in between epitaxial graphene and silicon carbide (SiC), for instance, may decouple the graphene with respect to the substrate due to the conversion of the buffer layer into a graphene layer. Ointercalation is known to release the strain of such 2D material and to lead to the formation of high structural quality AB-stacked bilayer graphene. Nonetheless, this interface transformation concomitantly degrades graphene electronic transport properties. In this work we employed different techniques in order to better understand the structure of the graphene/SiC interface generated by O-intercalation and to elucidate the origin of the poor electronic properties of graphene. Experimental results revealed the formation of a SiO2 rich layer with a defective transition layer in between it and the SiC, which is characterized by the existence of silicon oxycarbide structures. Scanning tunneling spectroscopy measurements revealed an extensive presence of electronic states just around the Fermi level all over the sample surface, which may suppress the charge carriers mobility around this region. According to theoretical calculations, such states are mainly due to the formation of silicon oxicarbides within the interfacial layer.
local.identifier.orcidhttps://orcid.org/0000-0002-0803-6011
local.identifier.orcidhttps://orcid.org/0000-0002-5203-0944
local.identifier.orcidhttps://orcid.org/0000-0002-2404-3879
local.identifier.orcidhttps://orcid.org/0000-0001-5688-5985
local.identifier.orcidhttps://orcid.org/0000-0002-0398-3992
local.identifier.orcidhttps://orcid.org/0000-0003-4956-5144
local.identifier.orcidhttps://orcid.org/0000-0003-3356-3312
local.identifier.orcidhttps://orcid.org/0000-0001-5897-6936
local.identifier.orcidhttps://orcid.org/0000-0002-1237-1525
local.identifier.orcidhttps://orcid.org/0000-0001-5268-1862
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0008622320305054

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