Electronic band tuning and multivalley Raman scattering in monolayer transition metal dichalcogenides at high pressures

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dc.creatorLuiz Gustavo Pimenta Martins
dc.creatorJing Kong
dc.creatorRiccardo Comin
dc.creatorBruno Ricardo de Carvalho
dc.creatorConnor A. Occhialini
dc.creatorNatália Paz Neme
dc.creatorJi-Hoon Park
dc.creatorQian Song
dc.creatorPedro Paulo de Mello Venezuela
dc.creatorMario Sergio de Carvalho Mazzoni
dc.creatorMatheus Josué de Souza Matos
dc.date.accessioned2025-07-18T12:50:10Z
dc.date.accessioned2025-09-09T01:09:06Z
dc.date.available2025-07-18T12:50:10Z
dc.date.issued2022
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1021/acsnano.2c01065
dc.identifier.issn1936-086X
dc.identifier.urihttps://hdl.handle.net/1843/83634
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofACS Nano
dc.rightsAcesso Restrito
dc.subjectAlta pressão
dc.subjectEspalhamento
dc.subjectFônons
dc.subject.otherHigh pressure
dc.subject.otherStrain
dc.subject.otherDouble-resonance Raman
dc.subject.otherMultivalley physics
dc.titleElectronic band tuning and multivalley Raman scattering in monolayer transition metal dichalcogenides at high pressures
dc.typeArtigo de periódico
local.citation.epage8075
local.citation.issue5
local.citation.spage8064
local.citation.volume16
local.description.resumoTransition metal dichalcogenides (TMDs) possess spin-valley locking and spin-split K/K′ valleys, which have led to many fascinating physical phenomena. However, the electronic structure of TMDs also exhibits other conduction band minima with similar properties, the Q/Q′ valleys. The intervalley K–Q scattering enables interesting physical phenomena, including multivalley superconductivity, but those effects are typically hindered in monolayer TMDs due to the large K–Q energy difference (ΔEKQ). To unlock elusive multivalley phenomena in monolayer TMDs, it is desirable to reduce ΔEKQ, while being able to sensitively probe the valley shifts and the multivalley scattering processes. Here, we use high pressure to tune the electronic properties of monolayer MoS2 and WSe2 and probe K–Q crossing and multivalley scattering via double-resonance Raman (DRR) scattering. In both systems, we observed a pressure-induced enhancement of the double-resonance LA and 2LA Raman bands, which can be attributed to a band gap opening and ΔEKQ decrease. First-principles calculations and photoluminescence measurements corroborate this scenario. In our analysis, we also addressed the multivalley nature of the DRR bands for WSe2. Our work establishes the DRR 2LA and LA bands as sensitive probes of strain-induced modifications to the electronic structure of TMDs. Conversely, their intensity could potentially be used to monitor the presence of compressive or tensile strain in TMDs. Furthermore, the ability to probe K–K′ and K–Q scattering as a function of strain shall advance our understanding of different multivalley phenomena in TMDs such as superconductivity, valley coherence, and valley transport.
local.identifier.orcidhttps://orcid.org/0000-0001-9777-7999
local.identifier.orcidhttps://orcid.org/0000-0002-1069-9973
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0002-2133-5155
local.identifier.orcidhttps://orcid.org/0000-0002-7978-2134
local.identifier.orcidhttps://orcid.org/0000-0003-4776-5206
local.identifier.orcidhttps://orcid.org/0000-0002-4166-2487
local.identifier.orcidhttps://orcid.org/0000-0001-5897-6936
local.identifier.orcidhttps://orcid.org/0000-0002-0398-3992
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acsnano.2c01065

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