Experimental realization of a quaternary bi-chalcogenide topological insulator with smaller effective mass

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dc.creatorPedro Henrique Rezende Gonçalves
dc.creatorWendell Simões e Silva
dc.creatorLuan Calil de Almeida Araújo
dc.creatorIgor de Souza Lana Antoniazzi
dc.creatorThais Chagas Peixoto Silva
dc.creatorÂngelo Malachias de Souza
dc.creatorEdmar Avellar Soares
dc.creatorVagner Eustáquio de Carvalho
dc.creatorDouglas Rodrigues Miquita
dc.creatorRogério Magalhães Paniago
dc.date.accessioned2023-04-04T19:59:00Z
dc.date.accessioned2025-09-09T00:16:50Z
dc.date.available2023-04-04T19:59:00Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1021/acs.jpcc.9b01811
dc.identifier.issn1932-7455
dc.identifier.urihttps://hdl.handle.net/1843/51572
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofThe Journal of Physical Chemistry C
dc.rightsAcesso Restrito
dc.subjectIsoladores topológicos
dc.subject.otherTopological insulator
dc.titleExperimental realization of a quaternary bi-chalcogenide topological insulator with smaller effective mass
dc.typeArtigo de periódico
local.citation.epage14403
local.citation.issue23
local.citation.spage14398
local.citation.volume123
local.description.resumoIt is known that Sb2Se3 does not exhibit topological insulator behavior due to its orthorhombic structure. The introduction of a small amount of bismuth and tellurium may change its structure to hexagonal, leading to a stable topological insulator compound. We report here the synthesis and the structural, chemical, and electronic properties of the topological insulator BiSbSe2.5Te0.5. Combining X-ray and electron diffraction measurements, we demonstrate the formation of this stable quaternary hexagonal single crystal. We used X-ray photoelectron spectroscopy to determine quantitatively the exact chemical composition of the sample. The topological insulating behavior is similar to that of other bismuth chalcogenides, as probed by angle-resolved photoemission spectroscopy. A p-type doping, leading to a 0.15 eV shift of the Fermi level was found. This value compensates the intrinsically n-type doping produced by selenium vacancies. We also found a smaller effective mass and a higher electron group velocity for the electrons in the topological states compared with Bi2Se3.
local.identifier.orcidhttps://orcid.org/0000-0001-6773-8921
local.identifier.orcidhttps://orcid.org/0000-0002-6174-9037
local.identifier.orcidhttps://orcid.org/0000-0002-0803-6011
local.identifier.orcidhttps://orcid.org/0000-0001-5688-5985
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0003-3356-3312
local.identifier.orcidhttps://orcid.org/0000-0001-5319-4652
local.identifier.orcidhttps://orcid.org/0000-0002-5203-0944
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acs.jpcc.9b01811

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