Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media

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dc.creatorGabriel Vinicius de Oliveira Silva
dc.creatorFrancesca Soavi
dc.creatorFabio Cicoira
dc.creatorClara Santato
dc.creatorArunprabaharan Subramanian
dc.creatorXiang Meng
dc.creatorShiming Zhang
dc.creatorMartin Schwellberger Barbosa
dc.creatorBill Baloukas
dc.creatorDaniel Chartrand
dc.creatorJuan Carlos González Pérez
dc.creatorMarcelo Ornaghi Orlandi
dc.date.accessioned2024-02-21T12:28:51Z
dc.date.accessioned2025-09-09T01:09:54Z
dc.date.available2024-02-21T12:28:51Z
dc.date.issued2019
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulo
dc.identifier.doihttps://doi.org/10.1088/1361-6463/ab1dbb
dc.identifier.issn1361-6463
dc.identifier.urihttps://hdl.handle.net/1843/64381
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Physics D: Applied Physics
dc.rightsAcesso Restrito
dc.subjectÓxidos
dc.subjectTungstênio
dc.subjectPolímeros
dc.subject.otherIonic liquids
dc.subject.otherTungsten oxide
dc.subject.otherIon-gated transistors
dc.subject.otherPhototransistors
dc.subject.otherPolyimide
dc.titleTungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media
dc.typeArtigo de periódico
local.citation.epage9
local.citation.issue30
local.citation.spage1
local.citation.volume52
local.description.resumoIon-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5–1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5–2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications.
local.identifier.orcidhttps://orcid.org/0000-0003-3415-6938
local.identifier.orcidhttps://orcid.org/0000-0002-0047-608X
local.identifier.orcidhttps://orcid.org/0000-0001-6731-0538
local.identifier.orcidhttps://orcid.org/0000-0002-3768-4333
local.identifier.orcidhttps://orcid.org/0000-0003-1255-357X
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0002-2054-3235
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/1361-6463/ab1dbb

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