Local photodoping in monolayer MoS2

Página do item simplificado
dc.creatorAndreij de Carvalho Gadelha
dc.creatorAlisson Ronieri Cadore
dc.creatorLucas Lafetá Prates da Fonseca
dc.creatorAna Maria de Paula
dc.creatorLeandro Malard Moreira
dc.creatorRodrigo Gribel Lacerda
dc.creatorLeonardo Cristiano Campos
dc.date.accessioned2025-02-24T18:37:40Z
dc.date.accessioned2025-09-09T00:13:52Z
dc.date.available2025-02-24T18:37:40Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/1361-6528/ab7de2
dc.identifier.issn1361-6528
dc.identifier.urihttps://hdl.handle.net/1843/80367
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNanotechnology
dc.rightsAcesso Restrito
dc.subjectTransporte eletrônico
dc.subject.otherMoS2
dc.subject.otherPhotomemory
dc.subject.otherElectronic transport
dc.subject.other2D materials
dc.subject.otherPhotodoping
dc.subject.otherPersistent photocurrent
dc.subject.otherScanning photocurrent microscopy
dc.titleLocal photodoping in monolayer MoS2
dc.typeArtigo de periódico
local.citation.epage6
local.citation.issue25
local.citation.spage1
local.citation.volume31
local.description.resumoInducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices.
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0002-1594-9142
local.identifier.orcidhttps://orcid.org/0000-0002-8551-5948
local.identifier.orcidhttps://orcid.org/0000-0003-4207-9653
local.identifier.orcidhttps://orcid.org/0000-0003-4777-7370
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/1361-6528/ab7de2

Arquivos

Licença do pacote

Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
License.txt
Tamanho:
1.99 KB
Formato:
Plain Text
Descrição:
Baixar

Coleções

Artigo de Periódico

Logo UFMG