Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes

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dc.creatorBárbara Luiza Teixeira Rosa
dc.creatorLucas Átila Bernardes Marçal
dc.creatorRodrigo Ribeiro de Andrade
dc.creatorLuciana Dornelas Pinto
dc.creatorWagner Nunes Rodrigues
dc.creatorPatrícia Lustoza de Souza
dc.creatorMauricio Pamplona Pires
dc.creatorRicardo Wagner Nunes
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-04-28T20:00:02Z
dc.date.accessioned2025-09-09T00:00:42Z
dc.date.available2023-04-28T20:00:02Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.description.sponsorshipFAPERJ - Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro
dc.identifier.doihttps://doi.org/10.1088/1361-6528/aa78e7
dc.identifier.issn1361-6528
dc.identifier.urihttps://hdl.handle.net/1843/52683
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNanotechnology
dc.rightsAcesso Aberto
dc.subjectNanomembranas
dc.subjectMicroscopia eletrônica de transmissão
dc.subjectRadiação sincrotrônica
dc.subject.otherSemiconductor nanomembranes
dc.subject.otherSynchrotron radiation
dc.subject.otherTransmission electron microscopy
dc.subject.otherHalf-loop defect propagation
dc.titleObservation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes
dc.typeArtigo de periódico
local.citation.epage12
local.citation.issue30
local.citation.spage1
local.citation.volume28
local.description.resumoIn this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such conditions TEM provides improved real-space statistics, allowing the observation of partial relaxation processes that were not previously detected by other techniques or by usual TEM cross section images. Besides the fully coherent and fully relaxed islands that are known to exist above previously established critical thickness, we prove the existence of partially relaxed islands, where incomplete 60° half-loop misfit dislocations lead to a lattice relaxation along one of the 〈110〉 directions, keeping a strained lattice in the perpendicular direction. Although individual defects cannot be directly observed, their implications to the resulting island registry are identified and discussed within the frame of half-loops propagations.
local.identifier.orcidhttps://orcid.org/0000-0003-4956-5144
local.identifier.orcidhttps://orcid.org/0000-0002-6147-7799
local.identifier.orcidhttps://orcid.org/0000-0001-9664-0181
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentCMI - CENTRO DE MICROSCOPIA
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/1361-6528/aa78e7/meta

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