Temperature evolution of defects and atomic ordering in Si1-x Gex islands on Si(001)

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dc.creatorMarie-Ingrid Richard
dc.creatorÂngelo Malachias de Souza
dc.creatorMathieu Stoffel
dc.creatorTsvetelina Merdzhanova
dc.creatorOliver G. Schmidt
dc.creatorGilles Renaud
dc.creatorTill H. Metzger
dc.creatorTobias U. Schülli
dc.date.accessioned2023-03-09T18:02:10Z
dc.date.accessioned2025-09-08T23:24:28Z
dc.date.available2023-03-09T18:02:10Z
dc.date.issued2016
dc.format.mimetypepdf
dc.identifier.doihttps://doi.org/10.1063/1.4942530
dc.identifier.issn1089-7550
dc.identifier.urihttps://hdl.handle.net/1843/50772
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Applied Physics
dc.rightsAcesso Restrito
dc.subjectDifração de raios X
dc.subjectMicroscopia
dc.subject.otherX-ray diffraction
dc.subject.otherMicroscopy
dc.titleTemperature evolution of defects and atomic ordering in Si1-x Gex islands on Si(001)
dc.typeArtigo de periódico
local.citation.epage085704-10
local.citation.issue8
local.citation.spage085704-1
local.citation.volume119
local.description.resumoThe observation of atomic ordering and signatures of defects in self-assembled Ge islands using x-ray diffraction techniques have been previously treated as unrelated subjects. However, mutual understanding can be achieved when both subjects are studied in a common frame. Here, we report on measurements and analysis of both defects and atomic ordering in Si1−xGex islands epitaxially grown on Si(001) substrates as a function of growth temperature. By using x-ray diffraction and mapping around a bulk forbidden reflection, defect sizes, and in-plane spacing between nearby dislocations are extracted and related to the composition of the islands. The results fit well with an independent determination using selective wet chemical etching and atomic force microscopy measurements. Moreover, the temperature dependence of the ordered domain size is discussed. Although both atomic ordering and defect formation take place independently in the system, it is found that the relaxation provided by the onset of defects does not affect the formation of ordered domains, recently pointed out to be stabilized by strain and surface equilibrium on islands facets.
local.identifier.orcidhttps://orcid.org/0000-0002-8172-3141
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0003-3489-4519
local.identifier.orcidhttps://orcid.org/0000-0003-0902-6330
local.identifier.orcidhttps://orcid.org/0000-0001-9503-8367
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://aip.scitation.org/doi/10.1063/1.4942530

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