Towards high-sensitive built-in current sensors enabling detection of radiation-induced soft errors

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dc.creatorRaphael de Oliveira Rocha
dc.creatorFrank Sill Torres
dc.creatorRodrigo Possamai Bastos
dc.date.accessioned2025-04-03T15:47:04Z
dc.date.accessioned2025-09-09T00:52:56Z
dc.date.available2025-04-03T15:47:04Z
dc.date.issued2017
dc.identifier.doi10.1016/j.microrel.2017.08.015
dc.identifier.issn0026-2714
dc.identifier.urihttps://hdl.handle.net/1843/81270
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofMicroelectronics reliability
dc.rightsAcesso Restrito
dc.subjectCircuitos integrados
dc.subjectTransitórios (Eletricidade)
dc.subject.otherSoft Errors
dc.subject.otherDesign for Reliability
dc.subject.othersensors enable fast detection of radiation induced soft errors
dc.subject.otherBBICS stand out by avoidance of a delay penalty
dc.titleTowards high-sensitive built-in current sensors enabling detection of radiation-induced soft errors
dc.typeArtigo de periódico
local.citation.epage196
local.citation.spage190
local.citation.volume78
local.description.resumoSoft error resilience is an increasingly important requirement of integrated circuits realized in CMOS nanometer technologies. Among the several approaches, Bulk Built-in Current Sensors (BBICS) offer a promising solution able to detect particle strikes immediately after its occurrence. Principal challenges for its wide application in common designs are area costs and robustness, both directly related to the sensor's sensitivity. Following this requirement, this work presents strategies enabling the design of high-sensitive BBICS. In detail, we are proposing three approaches based on gate voltage control, body biasing, and stack forcing that can be integrated in all state-of-the-art BBICS architectures. In order to verify the feasibility of this approaches, the proposed techniques have been integrated in a modular BBICS realized in a commercial 65 nm technology. Simulation results indicate an increase of the detection sensitivity by up to factor 6, leading to 17% area overhead, response times around 1 ns, a negligible power penalty, and high robustness against wide variations of temperature and process parameters.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0026271417304067

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