Chemically driven isothermal closed space vapor transport of MoO2: thin films, flakes and in situ tellurization

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dc.creatorOsvaldo de Melo Pereira
dc.creatorVicente Torres-Costa
dc.creatorLuis García Pelayo
dc.creatorYoandris González
dc.creatorOmar Concepción Díaz
dc.creatorMiguel Manso Silván
dc.creatorRubén López Nebreda
dc.creatorJose Luis Pau Vizcaino
dc.creatorJuan Carlos González Pérez
dc.creatorAurelio Climent-Font
dc.date.accessioned2024-03-01T13:14:30Z
dc.date.accessioned2025-09-09T00:38:55Z
dc.date.available2024-03-01T13:14:30Z
dc.date.issued2018
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1039/c8tc01685b
dc.identifier.issn2050-7534
dc.identifier.urihttps://hdl.handle.net/1843/65039
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Materials Chemistry C
dc.rightsAcesso Restrito
dc.subjectFilmes finos
dc.subject.otherThin films
dc.subject.otherTellurization
dc.titleChemically driven isothermal closed space vapor transport of MoO2: thin films, flakes and in situ tellurization
dc.typeArtigo de periódico
local.citation.epage6807
local.citation.issue25
local.citation.spage6799
local.description.resumoA novel procedure, based on a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at a relatively low temperature and using MoO3 as the source. In contrast to the conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate volatile transport species that is produced in the complex reduction reaction of MoO3. An added value of this simple method is the possibility of transforming the MoO2 into MoTe2, one of the most interesting members of the transition metal dichalcogenide family. This is achieved in a sequential process that includes the growth of Mo oxide and its (in situ) tellurization in two consecutive steps.
local.identifier.orcidhttps://orcid.org/0000-0002-8502-5711
local.identifier.orcidhttps://orcid.org/0000-0001-5066-2799
local.identifier.orcidhttps://orcid.org/0000-0001-6667-7776
local.identifier.orcidhttps://orcid.org/0000-0001-8197-7523
local.identifier.orcidhttps://orcid.org/0000-0002-5063-1607
local.identifier.orcidhttps://orcid.org/0000-0003-2893-0413
local.identifier.orcidhttps://orcid.org/0000-0002-1371-071X
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.rsc.org/en/content/articlelanding/2018/tc/c8tc01685b

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