Hot carrier transport limits the displacive excitation of coherent phonons in bismuth

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dc.creatorGiriraj Jnawali
dc.creatorMichael Horn-von Hoegen
dc.creatorDavide Boschetto
dc.creatorLeandro Malard Moreira
dc.creatorTony F. Heinz
dc.creatorGerman Sciaini
dc.creatorFabian Thiemann
dc.creatorT. Payer
dc.creatorLaurenz Kremeyer
dc.creatorFrank Joachim Meyer zu Heringdorf
dc.date.accessioned2025-02-24T19:00:19Z
dc.date.accessioned2025-09-09T01:02:32Z
dc.date.available2025-02-24T19:00:19Z
dc.date.issued2021
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.identifier.doihttps://doi.org/10.1063/5.0056813
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1843/80374
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Restrito
dc.subjectFônons
dc.subjectPropriedades ópticas
dc.subjectSemimetais
dc.subjectFilmes finos
dc.subjectBismuto
dc.subject.otherPhonons
dc.subject.otherOptical properties
dc.subject.otherReflectance spectroscopy
dc.subject.otherSemimetals
dc.subject.otherPhonon spectroscopy
dc.subject.otherThin films
dc.subject.otherUltrafast pump probe spectroscopy
dc.subject.otherPhotoexcitations
dc.subject.otherBismuth
dc.subject.otherElectron scattering
dc.titleHot carrier transport limits the displacive excitation of coherent phonons in bismuth
dc.typeArtigo de periódico
local.citation.epage091601-5
local.citation.issue9
local.citation.spage091601-1
local.citation.volume119
local.description.resumoWe performed femtosecond transient reflectivity measurements on epitaxially grown bismuth (Bi) films in the weak photoexcitation regime. Single crystalline ultrathin Bi films down to a thickness of 7 nm enabled us to determine a clear correspondence between the amplitude of the coherent A1g phonon and the photoexcitation level. We were able to empirically measure the effective hot carrier penetration length that determines the excited carrier density governing the magnitude of the coherent A1g phonon in Bi. Our findings suggest that the transport behavior of hot carriers is to be taken into consideration in order to provide insights into the mechanism for the displacive excitation of coherent phonons.
local.identifier.orcidhttps://orcid.org/0000-0003-0954-8614
local.identifier.orcidhttps://orcid.org/0000-0003-0324-3457
local.identifier.orcidhttps://orcid.org/0000-0001-6516-0652
local.identifier.orcidhttps://orcid.org/0000-0003-4207-9653
local.identifier.orcidhttps://orcid.org/0000-0003-1365-9464
local.identifier.orcidhttps://orcid.org/0000-0002-2120-3996
local.identifier.orcidhttps://orcid.org/0000-0002-2903-2933
local.identifier.orcidhttps://orcid.org/0000-0002-7091-2887
local.identifier.orcidhttps://orcid.org/0000-0002-5878-2012
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.aip.org/aip/apl/article/119/9/091601/41507/Hot-carrier-transport-limits-the-displacive

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