Accurate switching energy measurement of wide band-gap semiconductors at low current

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dc.creatorGustavo Sathler Zappulla
dc.creatorBernardo Cougo
dc.creatorMarco Vinício Teixeira Andrade
dc.creatorLenin Martins Ferreira Morais
dc.date.accessioned2025-06-02T13:07:24Z
dc.date.accessioned2025-09-09T00:33:08Z
dc.date.available2025-06-02T13:07:24Z
dc.date.issued2023
dc.identifier.urihttps://hdl.handle.net/1843/82688
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofPCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
dc.rightsAcesso Restrito
dc.subjectEletrônica de potência
dc.subject.otherAccurate Measurement , Wide Bandgap , Wide Bandgap Semiconductor , Switching Energy , Dynamic Characteristics , Characterization Methods , Loss Estimation , Test Bench , Switching Loss , Discussion Of The Results , Voltage Drop , Current Increases , Figure Of Merit , Switching Frequency , Dead Time , Current Waveforms , Parasitic Capacitance , Negligible Loss , Output Capacitor , Body Diode , Junction Temperature , Power Loop , Parasitic Inductance , Nominal Power , Wide Bandgap Devices , Parallel Capacitor , Dual Active Bridge , Negligible Variation , Circuit Diagram
dc.titleAccurate switching energy measurement of wide band-gap semiconductors at low current
dc.typeArtigo de evento
local.description.resumoSeveral applications require efficiency-oriented design, in which high performance wide bandgap semiconductors are used in low power converters. Precise switching loss estimation at low current is essential to achieve accurate design, although it is not frequently addressed in the literature. This paper reviews dynamic characterization methods with focus on wide bandgap technologies. The Double Pulse and Modified Opposition methods are compared in order to highlight advantages and limitations of each one, especially at low current. Both are verified through simulations and in a real test bench, whose results are compared with datasheet curves and evaluated through a case study.
local.publisher.countryAlemanha
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICA
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/10173389

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