Mg-doping of GaAs thin films grown by MBE

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dc.creatorHenrique Limborço
dc.creatorMarcos Vinicius Baeta Moreira
dc.creatorFranklin Massami Matinaga
dc.creatorAlfredo Gontijo de Oliveira
dc.creatorJuan Carlos González Pérez
dc.date.accessioned2024-02-21T11:44:07Z
dc.date.accessioned2025-09-09T01:27:22Z
dc.date.available2024-02-21T11:44:07Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1109/SBMicro.2016.7731321
dc.identifier.isbn9781509027880
dc.identifier.urihttps://hdl.handle.net/1843/64378
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofSymposium on Microelectronics Technology and Devices (SBMicro)
dc.rightsAcesso Restrito
dc.subjectFilmes finos
dc.subjectEspectroscopia de fotoluminescência
dc.subject.otherThin films
dc.subject.otherPhotoluminescence spectroscopy
dc.titleMg-doping of GaAs thin films grown by MBE
dc.typeArtigo de evento
local.citation.epage4
local.citation.issue31
local.citation.spage1
local.description.resumoThe influence of the growth conditions in the incorporation of Mg dopant atoms during the growth of GaAs thin films using two different substrate orientations was investigated electrically by Hall effect measurements and by Photoluminescence spectroscopy. Mg-doped GaAs thin films were successfully grown by molecular beam epitaxy with free carrier concentration varying between ~10 16 cm -3 to ~10 19 cm -3 . The wide doping range obtained is suitable to fabricate a great variety of optoelectronic devices. The analysis of the incorporation of Mg atoms for several growth temperatures established two values for the thermal desorption activation energy ED of Mg atoms in the GaAs surface, nominally ED 111 = (1.94 ± 0.14) eV for the (111)B samples and ED 100 = (1.11 ± 0.16) eV for the (100). Two very close bands were observed in the PL emission of the samples and identified as the electron-Mg acceptor level (e-A) transition, at approximately 1.49 eV, and the donor-to-Mg acceptor level (D-A) transition, at approximately 1.48 eV. At high doping levels a red shift of the e-A and D-A transitions was observed for the (111)B thin films, effect that are related to many-body interactions as the doping level increases.
local.identifier.orcidhttp://orcid.org/0000-0003-1181-3982
local.identifier.orcidhttps://orcid.org/0000-0002-0507-2471
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/7731321

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