Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide

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dc.creatorRafael Silva Alencar
dc.creatorRaphael Longuinhos Monteiro Lobato
dc.creatorCassiano Rabelo e Silva
dc.creatorHudson Luiz Silva de Miranda
dc.creatorBartolomeu Cruz Viana Neto
dc.creatorAntonio Gomes de Souza Filho
dc.creatorLuiz Gustavo de Oliveira Lopes Cançado
dc.creatorAdo Jorio de Vasconcelos
dc.creatorJenaina Ribeiro Soares
dc.date.accessioned2022-08-04T12:39:56Z
dc.date.accessioned2025-09-08T23:20:04Z
dc.date.available2022-08-04T12:39:56Z
dc.date.issued2020-10-16
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.description.sponsorshipOutra Agência
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.102.165307
dc.identifier.issn24699969
dc.identifier.urihttps://hdl.handle.net/1843/43968
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofPhysical Review B
dc.rightsAcesso Restrito
dc.subjectEspectroscopia de Raman
dc.subjectGálio
dc.subjectCrystal structures
dc.subjectPhonons
dc.subject.otherRaman spectroscopy polarization
dc.subject.otherGallium sulfide
dc.subject.otherCrystal structure
dc.subject.otherCrystal simmetry
dc.subject.otherOptical phonons
dc.titleRaman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide
dc.typeArtigo de periódico
local.citation.epage165307-10
local.citation.issue16
local.citation.spage165307-1
local.citation.volume102
local.description.resumoGroup-III post-transition-metal monochalcogenides like gallium sulfide (GaS) are layered semiconductors with weakly interacting adjacent layers, which allow them to be reduced to the two-dimensional nanometric thickness level by different exfoliation approaches, similar to graphene. Here, we investigate the intensity polarization dependence of the Raman modes for a different number of GaS layers and use symmetry analysis and density-functional perturbation theory to provide further information on these structures. The Raman polarization-dependent behaviors of the bulk relative modes A1g and E2g were found to be independent of the number of layers, being proportional to cos2(θ) for A1g modes and constant for E2g modes. The computational calculations for two and three layers show Raman active modes emerging at Raman shifts near the bulk Raman modes, with A1g (A1 ) and Eg (E) symmetries for an even (odd) number of layers, some of them being observed as “shoulders” in the experimental Raman spectra. These phonon modes present Raman tensors with components similar to those observed in bulk, thus explaining the same polar dependencies for different GaS thicknesses. The Raman intensity calculations were made by implementing the specific experimental geometry used here, thus resulting in good qualitative agreement. These results are fundamental for the understanding of the structural and vibrational changes when GaS is reduced to the few-layer limit, layer-number differentiation, and for further symmetry-lowering studies by strain manipulation or substrate interaction, which are routine issues in both fundamental research and device fabrication.
local.identifier.orcidhttps://orcid.org/0000-0002-9992-7564
local.identifier.orcidhttps://orcid.org/0000-0003-1615-4672
local.identifier.orcidhttps://orcid.org/0000-0003-0488-2242
local.identifier.orcidhttps://orcid.org/0000-0002-9946-5224
local.identifier.orcidhttps://orcid.org/0000-0002-5207-4269
local.identifier.orcidhttps://orcid.org/0000-0003-3802-1168
local.identifier.orcidhttps://orcid.org/0000-0003-0816-0888
local.identifier.orcidhttps://orcid.org/0000-0002-5978-2735
local.identifier.orcidhttps://orcid.org/0000-0001-9248-2243
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICA
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.165307

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