Use este identificador para citar ou linkar para este item: http://hdl.handle.net/1843/50772
Tipo: Artigo de Periódico
Título: Temperature evolution of defects and atomic ordering in Si1-x Gex islands on Si(001)
Autor(es): Marie-Ingrid Richard
Ângelo Malachias de Souza
Mathieu Stoffel
Tsvetelina Merdzhanova
Oliver G. Schmidt
Gilles Renaud
Till H. Metzger
Tobias U. Schülli
Resumo: The observation of atomic ordering and signatures of defects in self-assembled Ge islands using x-ray diffraction techniques have been previously treated as unrelated subjects. However, mutual understanding can be achieved when both subjects are studied in a common frame. Here, we report on measurements and analysis of both defects and atomic ordering in Si1−xGex islands epitaxially grown on Si(001) substrates as a function of growth temperature. By using x-ray diffraction and mapping around a bulk forbidden reflection, defect sizes, and in-plane spacing between nearby dislocations are extracted and related to the composition of the islands. The results fit well with an independent determination using selective wet chemical etching and atomic force microscopy measurements. Moreover, the temperature dependence of the ordered domain size is discussed. Although both atomic ordering and defect formation take place independently in the system, it is found that the relaxation provided by the onset of defects does not affect the formation of ordered domains, recently pointed out to be stabilized by strain and surface equilibrium on islands facets.
Assunto: Difração de raios X
Microscopia
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Instituição: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de Acesso: Acesso Restrito
Identificador DOI: https://doi.org/10.1063/1.4942530
URI: http://hdl.handle.net/1843/50772
Data do documento: 2016
metadata.dc.url.externa: https://aip.scitation.org/doi/10.1063/1.4942530
metadata.dc.relation.ispartof: Journal of Applied Physics
Aparece nas coleções:Artigo de Periódico

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