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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/50772
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dc.creatorMarie-Ingrid Richardpt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorMathieu Stoffelpt_BR
dc.creatorTsvetelina Merdzhanovapt_BR
dc.creatorOliver G. Schmidtpt_BR
dc.creatorGilles Renaudpt_BR
dc.creatorTill H. Metzgerpt_BR
dc.creatorTobias U. Schüllipt_BR
dc.date.accessioned2023-03-09T18:02:10Z-
dc.date.available2023-03-09T18:02:10Z-
dc.date.issued2016-
dc.citation.volume119pt_BR
dc.citation.issue8pt_BR
dc.citation.spage085704-1pt_BR
dc.citation.epage085704-10pt_BR
dc.identifier.doihttps://doi.org/10.1063/1.4942530pt_BR
dc.identifier.issn1089-7550pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/50772-
dc.description.resumoThe observation of atomic ordering and signatures of defects in self-assembled Ge islands using x-ray diffraction techniques have been previously treated as unrelated subjects. However, mutual understanding can be achieved when both subjects are studied in a common frame. Here, we report on measurements and analysis of both defects and atomic ordering in Si1−xGex islands epitaxially grown on Si(001) substrates as a function of growth temperature. By using x-ray diffraction and mapping around a bulk forbidden reflection, defect sizes, and in-plane spacing between nearby dislocations are extracted and related to the composition of the islands. The results fit well with an independent determination using selective wet chemical etching and atomic force microscopy measurements. Moreover, the temperature dependence of the ordered domain size is discussed. Although both atomic ordering and defect formation take place independently in the system, it is found that the relaxation provided by the onset of defects does not affect the formation of ordered domains, recently pointed out to be stabilized by strain and surface equilibrium on islands facets.pt_BR
dc.format.mimetypepdfpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofJournal of Applied Physics-
dc.rightsAcesso Restritopt_BR
dc.subjectX-ray diffractionpt_BR
dc.subjectMicroscopypt_BR
dc.subject.otherDifração de raios Xpt_BR
dc.subject.otherMicroscopiapt_BR
dc.titleTemperature evolution of defects and atomic ordering in Si1-x Gex islands on Si(001)pt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://aip.scitation.org/doi/10.1063/1.4942530pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8172-3141pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3489-4519pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0902-6330pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9503-8367pt_BR
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