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http://hdl.handle.net/1843/53715| Tipo: | Tese |
| Título: | Interplay of crystalline strain and electronic properties in topological insulators and semiconductor thin films grown by Molecular Beam Epitaxy |
| Título(s) alternativo(s): | Relação entre o strain cristalino e propriedades eletrônicas em filmes finos de isolantes topológicos e semicondutores crescidos por Epitaxia de Feixes Moleculares |
| Autor(es): | Gilberto Rodrigues da Silva Junior |
| primer Tutor: | Ângelo Malachias de Souza |
| primer miembro del tribunal : | Myriano Henriques de Oliveira Junior |
| Segundo miembro del tribunal: | Ricardo Wagner Nunes |
| Tercer miembro del tribunal: | Beatriz Diaz Moreno |
| Cuarto miembro del tribunal: | Matheus Josué de Souza Matos |
| Resumen: | In this thesis, we studied three different types of samples, all obtained by the molecular beam epitaxy technique (MBE). In the first set of samples, epitaxial layers of Silicon-Germanium (SiGe) after the Germanium condensation process were studied. Our results show that, starting from a low concentration Si0.92Ge0.08 layer grown on top of a crystalline Si (001) on SOI substrates, we can reach desirable Ge concentration with a non-monotonic interplay on in-plane and out-of-plane strain. The Ge concentration and SiGe layer thickness was evaluated by a combination of secondary ion mass spectroscopy (SIMS) and synchotron X-ray measurements (diffraction and reflectivity). In the second set of samples, we have studied the first stages of the heteroepitaxial growth of layered bismuth telluride (Bi2Te3) topological insulator on top of highly oriented pyrolitic graphite (HOPG). Samples were investigated by atomic force microscopy (AFM), synchrotron x-ray diffraction (XRD), and micro-Raman spectroscopy. AFM images show hexagonal/triangular flat islands with exposed HOPG areas for the low coverage regime. The existence of pseudomorphic strain at the initial Bi2Te3 layers was retrieved by both XRD and Raman spectroscopy. Finally, in the third set of samples, we studied the morphological and electronic properties of Bi2Te3 layers doped with Europium (Eu) atoms. Bi2Te3 layers were deposited on a Barium fluoride (BaF2) substrate and characterized by atomic force microscopy (AFM) and scanning tunneling microscopy/spectroscopy (STM/STS) techniques. Our results indicate regions along the sample surface in which the signature of the topological surface states disappears as well as the existence of a second crystalline phase. |
| Asunto: | Raios X, difração Epitaxia por feixe molecular Semicondutores |
| Idioma: | eng |
| País: | Brasil |
| Editor: | Universidade Federal de Minas Gerais |
| Sigla da Institución: | UFMG |
| Departamento: | ICX - DEPARTAMENTO DE FÍSICA |
| Curso: | Programa de Pós-Graduação em Física |
| Tipo de acceso: | Acesso Aberto |
| metadata.dc.rights.uri: | http://creativecommons.org/licenses/by-nc-nd/3.0/pt/ |
| URI: | http://hdl.handle.net/1843/53715 |
| Fecha del documento: | 29-abr-2022 |
| Aparece en las colecciones: | Teses de Doutorado |
archivos asociados a este elemento:
| archivo | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| Tese Gilberto Junior.pdf | 8.23 MB | Adobe PDF | Visualizar/Abrir |
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