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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/53715
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dc.contributor.advisor1Ângelo Malachias de Souzapt_BR
dc.contributor.advisor1Latteshttp://lattes.cnpq.br/8428074335454256pt_BR
dc.contributor.referee1Myriano Henriques de Oliveira Juniorpt_BR
dc.contributor.referee2Ricardo Wagner Nunespt_BR
dc.contributor.referee3Beatriz Diaz Morenopt_BR
dc.contributor.referee4Matheus Josué de Souza Matospt_BR
dc.creatorGilberto Rodrigues da Silva Juniorpt_BR
dc.creator.Latteshttp://lattes.cnpq.br/4121324417549540pt_BR
dc.date.accessioned2023-05-22T12:08:17Z-
dc.date.available2023-05-22T12:08:17Z-
dc.date.issued2022-04-29-
dc.identifier.urihttp://hdl.handle.net/1843/53715-
dc.description.resumoIn this thesis, we studied three different types of samples, all obtained by the molecular beam epitaxy technique (MBE). In the first set of samples, epitaxial layers of Silicon-Germanium (SiGe) after the Germanium condensation process were studied. Our results show that, starting from a low concentration Si0.92Ge0.08 layer grown on top of a crystalline Si (001) on SOI substrates, we can reach desirable Ge concentration with a non-monotonic interplay on in-plane and out-of-plane strain. The Ge concentration and SiGe layer thickness was evaluated by a combination of secondary ion mass spectroscopy (SIMS) and synchotron X-ray measurements (diffraction and reflectivity). In the second set of samples, we have studied the first stages of the heteroepitaxial growth of layered bismuth telluride (Bi2Te3) topological insulator on top of highly oriented pyrolitic graphite (HOPG). Samples were investigated by atomic force microscopy (AFM), synchrotron x-ray diffraction (XRD), and micro-Raman spectroscopy. AFM images show hexagonal/triangular flat islands with exposed HOPG areas for the low coverage regime. The existence of pseudomorphic strain at the initial Bi2Te3 layers was retrieved by both XRD and Raman spectroscopy. Finally, in the third set of samples, we studied the morphological and electronic properties of Bi2Te3 layers doped with Europium (Eu) atoms. Bi2Te3 layers were deposited on a Barium fluoride (BaF2) substrate and characterized by atomic force microscopy (AFM) and scanning tunneling microscopy/spectroscopy (STM/STS) techniques. Our results indicate regions along the sample surface in which the signature of the topological surface states disappears as well as the existence of a second crystalline phase.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.programPrograma de Pós-Graduação em Físicapt_BR
dc.publisher.initialsUFMGpt_BR
dc.rightsAcesso Abertopt_BR
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/pt/*
dc.subjectSynchrotron x-ray diffractionpt_BR
dc.subjectAtomic force microscopypt_BR
dc.subjectScanning tunneling microscopy/spectroscopypt_BR
dc.subjectGe condensationpt_BR
dc.subjectBismuth telluridept_BR
dc.subjectTopological insulatorspt_BR
dc.subject.otherRaios X, difraçãopt_BR
dc.subject.otherEpitaxia por feixe molecularpt_BR
dc.subject.otherSemicondutorespt_BR
dc.titleInterplay of crystalline strain and electronic properties in topological insulators and semiconductor thin films grown by Molecular Beam Epitaxypt_BR
dc.title.alternativeRelação entre o strain cristalino e propriedades eletrônicas em filmes finos de isolantes topológicos e semicondutores crescidos por Epitaxia de Feixes Molecularespt_BR
dc.typeTesept_BR
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