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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/54104
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dc.creatorIgor de Souza Lana Antoniazzipt_BR
dc.creatorRogério Magalhães Paniagopt_BR
dc.creatorMyriano Henriques de Oliveira Juniorpt_BR
dc.creatorThais Chagas Peixoto Silvapt_BR
dc.creatorMatheus Josué de Souza Matospt_BR
dc.creatorLucas Atila Bernardes Marçalpt_BR
dc.creatorEdmar Avellar Soarespt_BR
dc.creatorMário Sérgio de Carvalho Mazzonipt_BR
dc.creatorRoberto Hiroki Miwapt_BR
dc.creatorJoão Marcelo Jordão Lopespt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.date.accessioned2023-05-29T17:55:31Z-
dc.date.available2023-05-29T17:55:31Z-
dc.date.issued2020-
dc.citation.volume167pt_BR
dc.citation.spage746pt_BR
dc.citation.epage759pt_BR
dc.identifier.doihttps://doi.org/10.1016/j.carbon.2020.05.064pt_BR
dc.identifier.issn1873-3891pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/54104-
dc.description.resumoLow-dimensionality materials are highly susceptible to interfaces. Indeed, intercalation of different chemical species in between epitaxial graphene and silicon carbide (SiC), for instance, may decouple the graphene with respect to the substrate due to the conversion of the buffer layer into a graphene layer. Ointercalation is known to release the strain of such 2D material and to lead to the formation of high structural quality AB-stacked bilayer graphene. Nonetheless, this interface transformation concomitantly degrades graphene electronic transport properties. In this work we employed different techniques in order to better understand the structure of the graphene/SiC interface generated by O-intercalation and to elucidate the origin of the poor electronic properties of graphene. Experimental results revealed the formation of a SiO2 rich layer with a defective transition layer in between it and the SiC, which is characterized by the existence of silicon oxycarbide structures. Scanning tunneling spectroscopy measurements revealed an extensive presence of electronic states just around the Fermi level all over the sample surface, which may suppress the charge carriers mobility around this region. According to theoretical calculations, such states are mainly due to the formation of silicon oxicarbides within the interfacial layer.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofCarbon-
dc.rightsAcesso Restritopt_BR
dc.subjectOxygenpt_BR
dc.subjectGraphenept_BR
dc.subject.otherOxigêniopt_BR
dc.subject.otherGrafenopt_BR
dc.titleOxygen intercalated graphene on SiC(0001): multiphase SiOx layer formation and its influence on graphene electronic propertiespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://www.sciencedirect.com/science/article/pii/S0008622320305054pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0803-6011pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5203-0944pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-2404-3879pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5688-5985pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0398-3992pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4956-5144pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3356-3312pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5897-6936pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1237-1525pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5268-1862pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
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