Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/54501
Tipo: Artigo de Periódico
Título: Reconfiguration of amorphous complex oxides: a route to a broad range of assembly phenomena, hybrid materials, and novel functionalities
Autor(es): Divya J. Prakash
Kaddour Lekhal
Izabela Szlufarska
Paul Gregory Evans
Francesca Cavallo
Yajin Chen
Mengistie Leweyehu Debasu
Donald E. Savage
Chaiyapat Tangpatjaroen
Christoph Friedrich Deneke
Ângelo Malachias de Souza
Adam D. Alfieri
Omar Elleuch
Resumen: Reconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO3 layer on a Si:B/Si1- x Gex :B heterostructure is reconfigured at the atomic scale upon heating, exhibiting a change in volume of ≈2% and accompanying biaxial stress. The Si:B/Si1- x Gex :B bilayer is fabricated by molecular beam epitaxy, followed by sputter deposition of SrTiO3 at room temperature. The processes yield a hybrid oxide/semiconductor nanomembrane. Upon release from the substrate, the nanomembrane rolls up and has a curvature determined by the stress in the epitaxially grown Si:B/Si1- x Gex :B heterostructure. Heating to 600 °C leads to a decrease of the radius of curvature consistent with the development of a large compressive biaxial stress during the reconfiguration of SrTiO3 . The control of stresses via post-deposition processing provides a new route to the assembly of complex-oxide-based heterostructures in 3D geometry. The reconfiguration of metastable mechanical stressors enables i) synthesis of various types of strained superlattice structures that cannot be fabricated by direct growth and ii) technologies based on strain engineering of complex oxides via highly scalable lithographic processes and on large-area semiconductor substrates.
Asunto: Óxidos
Nanomembranas
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Institución: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de acceso: Acesso Restrito
Identificador DOI: https://doi.org/10.1002/smll.202105424
URI: http://hdl.handle.net/1843/54501
Fecha del documento: 2021
metadata.dc.url.externa: https://onlinelibrary.wiley.com/doi/10.1002/smll.202105424
metadata.dc.relation.ispartof: Small
Aparece en las colecciones:Artigo de Periódico

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