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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/62219
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dc.creatorRaphaela de Oliveira Gonçalvespt_BR
dc.creatorMatheus Josué de Souza Matospt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorKlaus Wilhelm Heinrich Krambrockpt_BR
dc.creatorIngrid David Barcelospt_BR
dc.creatorLuis Antonio Guallichico Guallichicopt_BR
dc.creatorEduardo Policarpo Magalhães Campospt_BR
dc.creatorAlisson Ronieri Cadorept_BR
dc.creatorRaul de Oliveira Freitaspt_BR
dc.creatorFrancisco Mateus Cirilo da Silvapt_BR
dc.creatorVerônica de Carvalho Teixeirapt_BR
dc.creatorRoberto Magalhães Paniagopt_BR
dc.creatorHelio Chachampt_BR
dc.date.accessioned2024-01-01T12:48:24Z-
dc.date.available2024-01-01T12:48:24Z-
dc.date.issued2022-
dc.citation.volume599pt_BR
dc.citation.spage1pt_BR
dc.citation.epage12pt_BR
dc.identifier.doihttps://doi.org/10.1016/j.apsusc.2022.153959pt_BR
dc.identifier.issn1873-5584pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/62219-
dc.description.resumoPhyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic of clinochlore is the natural occurrence of defects and impurities which can strongly affect their optoelectronic properties, possibly in technologically interesting ways. In the present work, we carry out a thorough investigation of the clinochlore structure on both bulk and 2D exfoliated forms, discussing its optical features and the influence of the insertion of impurities on its macroscopic properties. Several experimental techniques are employed, followed by theoretical first-principles calculations considering several types of naturally-ocurring transition metal impurities in the mineral lattice and their effect on electronic and optical properties. We demonstrate the existence of requirements concerning surface quality and insulating properties of clinochlore that are mandatory for its suitable application in nanoelectronic devices. The results presented in this work provide important informations for clinochlore potential applications and establish a basis for further works that intend to optimize its properties to relevant 2D technological applications through defect engineering.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofApplied Surface Science-
dc.rightsAcesso Restritopt_BR
dc.subjectClinochlorept_BR
dc.subjectLayered materialspt_BR
dc.subjectPhyllosilicatept_BR
dc.subject2D applicationspt_BR
dc.subject.otherMineraispt_BR
dc.subject.otherFilossilicatospt_BR
dc.titleHigh throughput investigation of an emergent and naturally abundant 2D material: clinochlorept_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://www.sciencedirect.com/science/article/pii/S0169433222015021pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1391-6694pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0398-3992pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-7562-0285pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5778-7161pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4981-7460pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1081-0915pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3285-5447pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-7054-2265pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-2999-2800pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0540-7163pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5041-9094pt_BR
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