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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/64385
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dc.creatorPedro M. P. Salomépt_BR
dc.creatorElvira Maria Correia Fortunatopt_BR
dc.creatorRodrigo Ferrão de Paiva Martinspt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.creatorJoaquim Fernando Monteiro de Carvalho Pratas Leitãopt_BR
dc.creatorPaulo A. Fernandespt_BR
dc.creatorMarika Edoffpt_BR
dc.creatorSascha Sadewasserpt_BR
dc.creatorBart Vermangpt_BR
dc.creatorRodrigo Ribeiro de Andradept_BR
dc.creatorJennifer Cláudia Passos Teixeirapt_BR
dc.creatorJosé Miguel Vaz da Cunhapt_BR
dc.creatorManuel João de Moura Dias Mendespt_BR
dc.creatorSirazul Haquept_BR
dc.creatorJêrome Bormept_BR
dc.creatorHugo Manuel Brito Águaspt_BR
dc.date.accessioned2024-02-21T14:59:58Z-
dc.date.available2024-02-21T14:59:58Z-
dc.date.issued2018-
dc.citation.volume5pt_BR
dc.citation.issue2pt_BR
dc.citation.spage1pt_BR
dc.citation.epage10pt_BR
dc.identifier.doihttps://doi.org/10.1002/admi.201701101pt_BR
dc.identifier.issn2196-7350pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/64385-
dc.description.resumoThin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofAdvanced Materials Interfaces-
dc.rightsAcesso Restritopt_BR
dc.subjectSolar cellspt_BR
dc.subjectThin filmspt_BR
dc.subject.otherCélulas solarespt_BR
dc.subject.otherFilmes finospt_BR
dc.titlePassivation of interfaces in thin film solar cells: understanding the effects of a nanostructured rear point contact layerpt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://onlinelibrary.wiley.com/doi/full/10.1002/admi.201701101pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1050-2958pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4202-7047pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1997-7669pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-8131-3313pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4111-4613pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-8384-6025pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-2669-2087pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3155-6832pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1622-0193pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-7374-0726pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4115-4551pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5622-7760pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7350-649Xpt_BR
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