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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/82688
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dc.creatorGustavo Sathler Zappullapt_BR
dc.creatorBernardo Cougopt_BR
dc.creatorMarco Vinício Teixeira Andradept_BR
dc.creatorLenin Martins Ferreira Moraispt_BR
dc.date.accessioned2025-06-02T13:07:24Z-
dc.date.available2025-06-02T13:07:24Z-
dc.date.issued2023-
dc.identifier.urihttp://hdl.handle.net/1843/82688-
dc.description.resumoSeveral applications require efficiency-oriented design, in which high performance wide bandgap semiconductors are used in low power converters. Precise switching loss estimation at low current is essential to achieve accurate design, although it is not frequently addressed in the literature. This paper reviews dynamic characterization methods with focus on wide bandgap technologies. The Double Pulse and Modified Opposition methods are compared in order to highlight advantages and limitations of each one, especially at low current. Both are verified through simulations and in a real test bench, whose results are compared with datasheet curves and evaluated through a case study.pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryAlemanhapt_BR
dc.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICApt_BR
dc.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofPCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpt_BR
dc.rightsAcesso Restritopt_BR
dc.subjectAccurate Measurement , Wide Bandgap , Wide Bandgap Semiconductor , Switching Energy , Dynamic Characteristics , Characterization Methods , Loss Estimation , Test Bench , Switching Loss , Discussion Of The Results , Voltage Drop , Current Increases , Figure Of Merit , Switching Frequency , Dead Time , Current Waveforms , Parasitic Capacitance , Negligible Loss , Output Capacitor , Body Diode , Junction Temperature , Power Loop , Parasitic Inductance , Nominal Power , Wide Bandgap Devices , Parallel Capacitor , Dual Active Bridge , Negligible Variation , Circuit Diagrampt_BR
dc.subject.otherEletrônica de potênciapt_BR
dc.titleAccurate switching energy measurement of wide band-gap semiconductors at low currentpt_BR
dc.typeArtigo de Eventopt_BR
dc.url.externahttps://ieeexplore.ieee.org/document/10173389pt_BR
Appears in Collections:Artigo de Evento

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