Bi2:Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3
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Universidade Federal de Minas Gerais
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We report on the successful synthesis of a crystal of the strong topological insulator Bi4Te3 and the study of its surface electronic response. A combination of theoretical and experimental techniques allowed for a systematic study of the composition and electronic properties of the sample. These techniques include density functional theory (DFT), scanning tunneling microscopy and spectroscopy (STM-STS). DFT predicts that distinct surface topological states exist for the two surface terminations of Bi4Te3, i.e. Bi2 and Bi2Te3. These terminations are also clearly distinguished in STS measurements, which allow choosing the main conducting channel through a combination of topography and electronic response. We find that the density of states are similar to those of their parent crystals Bi2 and Bi2Te3, albeit shifted in energy.
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Teoria do funcional da densidade, Microscopia de tunelamento de varredura
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Functional density theory, Scanning tunneling microscopy and spectroscopy
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https://iopscience.iop.org/article/10.1088/2516-1075/ab7398/meta