Bi2:Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3

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dc.creatorThais Chagas Peixoto Silva
dc.creatorGuilherme Almeida Silva Ribeiro
dc.creatorPedro Henrique Rezende Gonçalves
dc.creatorLuan Calil de Almeida Araújo
dc.creatorWendell Simões e Silva
dc.creatorÂngelo Malachias de Souza
dc.creatorMário Sérgio de Carvalho Mazzoni
dc.creatorRogério Magalhães Paniago
dc.date.accessioned2023-05-25T18:46:45Z
dc.date.accessioned2025-09-09T01:28:06Z
dc.date.available2023-05-25T18:46:45Z
dc.date.issued2020
dc.identifier.doihttps://doi.org/10.1088/2516-1075/ab7398
dc.identifier.issn2516-1075
dc.identifier.urihttps://hdl.handle.net/1843/53941
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofElectronic Structure
dc.rightsAcesso Restrito
dc.subjectTeoria do funcional da densidade
dc.subjectMicroscopia de tunelamento de varredura
dc.subject.otherFunctional density theory
dc.subject.otherScanning tunneling microscopy and spectroscopy
dc.titleBi2:Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3
dc.typeArtigo de periódico
local.citation.issue1
local.citation.volume2
local.description.resumoWe report on the successful synthesis of a crystal of the strong topological insulator Bi4Te3 and the study of its surface electronic response. A combination of theoretical and experimental techniques allowed for a systematic study of the composition and electronic properties of the sample. These techniques include density functional theory (DFT), scanning tunneling microscopy and spectroscopy (STM-STS). DFT predicts that distinct surface topological states exist for the two surface terminations of Bi4Te3, i.e. Bi2 and Bi2Te3. These terminations are also clearly distinguished in STS measurements, which allow choosing the main conducting channel through a combination of topography and electronic response. We find that the density of states are similar to those of their parent crystals Bi2 and Bi2Te3, albeit shifted in energy.
local.identifier.orcidhttps://orcid.org/0000-0001-5688-5985
local.identifier.orcidhttps://orcid.org/0000-0002-4050-9560
local.identifier.orcidhttps://orcid.org/0000-0001-6773-8921
local.identifier.orcidhttps://orcid.org/0000-0002-6174-9037
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0001-5897-6936
local.identifier.orcidhttps://orcid.org/0000-0002-5203-0944
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2516-1075/ab7398/meta

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