Modified opposition method validation and analysis for characterization of Si IGBT
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Universidade Federal de Minas Gerais
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This paper showcases an application of the Modified Opposition Method (MOM) for the characterization of switching losses in silicon transistors namely IGBT devices. The platform built is composed of two half-bridges with an inductor connected between them, operating within two different current modes (AC Mode and DC Mode). In addition, it is presented an analysis regarding how each circuit component influences the switching losses alongside a comparison with datasheet data, acquired by means of the Double Pulse Test (DPT). The results showed that in low current applications (less than 10A), the losses calculated by MOM were lower (compared to the datasheet), while for higher currents, the losses calculated by MOM were higher, demonstrating the effect of temperature on switching energies. These differences can interfere in projects aiming for high efficiency over a wide load range.
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Insulated gate bipolar transistors , Current measurement , Switching loss , Switches , Silicon , Transistors , Method of moments, Modified Opposition Method (MOM) , Double Pulse Test (DPT) , IGBT , switching losses , inductor losses, Switching Loss , Switching Energy , Wide Load Range , AC Mode , DC Mode , Impedance , Magnetic Field , Power Loss , Alternating Current , Voltage Drop , Conduction Loss , Silicon Carbide , Current Waveforms , Parasitic Capacitance , Loss Of Induction , Schottky Diode , Gallium Nitride , Junction Temperature , Body Diode , Ac Resistance , Turn-off Loss , Switching Transistors , Reverse Recovery
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https://ieeexplore.ieee.org/document/10408656