Modified opposition method validation and analysis for characterization of Si IGBT

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dc.creatorMagno Otton Schneider
dc.creatorVítor Henrique Vieira Araújo
dc.creatorThiago Ribeiro de Oliveira
dc.creatorLenin Martins Ferreira Morais
dc.creatorGabriel Azevedo Fogli
dc.date.accessioned2025-06-02T11:51:55Z
dc.date.accessioned2025-09-08T23:10:33Z
dc.date.available2025-06-02T11:51:55Z
dc.date.issued2023
dc.identifier.doihttps://doi.org/10.1109/SPEC56436.2023.10408656
dc.identifier.urihttps://hdl.handle.net/1843/82679
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)
dc.rightsAcesso Restrito
dc.subjectCircuitos eletrônicos
dc.subject.otherInsulated gate bipolar transistors , Current measurement , Switching loss , Switches , Silicon , Transistors , Method of moments
dc.subject.otherModified Opposition Method (MOM) , Double Pulse Test (DPT) , IGBT , switching losses , inductor losses
dc.subject.otherSwitching Loss , Switching Energy , Wide Load Range , AC Mode , DC Mode , Impedance , Magnetic Field , Power Loss , Alternating Current , Voltage Drop , Conduction Loss , Silicon Carbide , Current Waveforms , Parasitic Capacitance , Loss Of Induction , Schottky Diode , Gallium Nitride , Junction Temperature , Body Diode , Ac Resistance , Turn-off Loss , Switching Transistors , Reverse Recovery
dc.titleModified opposition method validation and analysis for characterization of Si IGBT
dc.typeArtigo de evento
local.citation.spage1
local.description.resumoThis paper showcases an application of the Modified Opposition Method (MOM) for the characterization of switching losses in silicon transistors namely IGBT devices. The platform built is composed of two half-bridges with an inductor connected between them, operating within two different current modes (AC Mode and DC Mode). In addition, it is presented an analysis regarding how each circuit component influences the switching losses alongside a comparison with datasheet data, acquired by means of the Double Pulse Test (DPT). The results showed that in low current applications (less than 10A), the losses calculated by MOM were lower (compared to the datasheet), while for higher currents, the losses calculated by MOM were higher, demonstrating the effect of temperature on switching energies. These differences can interfere in projects aiming for high efficiency over a wide load range.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/10408656

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