Controlling the electronic bands of a 2D semiconductor by force microscopy
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Universidade Federal de Minas Gerais
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In this work, we investigate the transverse transport properties of few-layers MoS2 using a
Conductive Atomic Force Microscopy based technique. We find that the system changes between a
low-force regime, characterized by a nearly-ideal contact between the MoS2 flake and the substrate,
and a high-force regime, for which this contact starts to become highly non-ideal. We propose a
3-diode model that effectively describes the current-voltage characteristics of few-layers MoS2.
From this model, we estimate how fast the energy gaps of two-dimensional MoS2 materials change
as a function of the applied force. From our analysis, we estimate that MoS2-Au Schottky barrier
heights change at the rate of 0.21, 0.23, and 0.78 meV nN−1 for the few-layers, three-layers, and
two-layers MoS2, respectively. Our work opens up new possibilities of investigating and controlling
the electronic properties of 2D semiconducting materials.
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2D semiconductor, Strain engineering, MoS2, Electronic transport, Atomic Force Microscopy (AFM), Conductive AFM (CAFM)
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https://iopscience.iop.org/article/10.1088/2053-1583/aba5cb