Controlling the electronic bands of a 2D semiconductor by force microscopy

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dc.creatorDaniel Brito de Araújo
dc.creatorRodrigo Queiros de Almeida
dc.creatorAndreij de Carvalho Gadelha
dc.creatorNatália Pereira Rezende
dc.creatorFrancisco Carlos Carneiro Soares Salomão
dc.creatorFrancisco Wellery Nunes Silva
dc.creatorLeonardo Cristiano Campos
dc.creatorEduardo Bedê Barros
dc.date.accessioned2025-02-23T16:34:48Z
dc.date.accessioned2025-09-09T00:29:51Z
dc.date.available2025-02-23T16:34:48Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/aba5cb
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/80328
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectSemicondutores
dc.subject.other2D semiconductor
dc.subject.otherStrain engineering
dc.subject.otherMoS2
dc.subject.otherElectronic transport
dc.subject.otherAtomic Force Microscopy (AFM)
dc.subject.otherConductive AFM (CAFM)
dc.titleControlling the electronic bands of a 2D semiconductor by force microscopy
dc.typeArtigo de periódico
local.citation.epage7
local.citation.issue4
local.citation.spage1
local.citation.volume7
local.description.resumoIn this work, we investigate the transverse transport properties of few-layers MoS2 using a Conductive Atomic Force Microscopy based technique. We find that the system changes between a low-force regime, characterized by a nearly-ideal contact between the MoS2 flake and the substrate, and a high-force regime, for which this contact starts to become highly non-ideal. We propose a 3-diode model that effectively describes the current-voltage characteristics of few-layers MoS2. From this model, we estimate how fast the energy gaps of two-dimensional MoS2 materials change as a function of the applied force. From our analysis, we estimate that MoS2-Au Schottky barrier heights change at the rate of 0.21, 0.23, and 0.78 meV nN−1 for the few-layers, three-layers, and two-layers MoS2, respectively. Our work opens up new possibilities of investigating and controlling the electronic properties of 2D semiconducting materials.
local.identifier.orcidhttps://orcid.org/0000-0001-5216-6035
local.identifier.orcidhttps://orcid.org/0000-0002-0763-0393
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0002-9146-733X
local.identifier.orcidhttps://orcid.org/0000-0003-4743-2671
local.identifier.orcidhttps://orcid.org/0000-0002-3241-3059
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.identifier.orcidhttps://orcid.org/0000-0001-9210-9166
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/aba5cb

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