Gate-tunable non-volatile photomemory effect in MoS2 transistors
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Universidade Federal de Minas Gerais
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Artigo de periódico
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Resumo
Non-volatile memory devices have been limited to flash architectures that are complex devices.
Here, we present a unique photomemory effect in MoS 2 transistors. The photomemory is based on
a photodoping effect—a controlled way of manipulating the density of free charges in monolayer
MoS 2 using a combination of laser exposure and gate voltage application. The photodoping promotes
changes on the conductance of MoS 2 leading to photomemory states with high memory on/off ratio.
Such memory states are non-volatile with an expectation of retaining up to 50% of the information
for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the
recorded memory states. Finally, we propose a model to explain the photodoping, and we provide
experimental evidence supporting such a phenomenon. In summary, our work includes the MoS 2
phototransistors in the non-volatile memory devices and expands the possibilities of memory
application beyond conventional memory architectures.
Abstract
Assunto
Dispositivos optoeletrônicos
Palavras-chave
Photomemory, MoS2, Gate-tunable, Photodoping
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Endereço externo
https://iopscience.iop.org/article/10.1088/2053-1583/ab0af1