Gate-tunable non-volatile photomemory effect in MoS2 transistors

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dc.creatorAndreij de Carvalho Gadelha
dc.creatorAlisson Ronieri Cadore
dc.creatorKenji Watanabe
dc.creatorTakashi Taniguchi
dc.creatorAna Maria de Paula
dc.creatorLeandro Malard Moreira
dc.creatorRodrigo Gribel Lacerda
dc.creatorLeonardo Cristiano Campos
dc.date.accessioned2025-02-23T17:34:34Z
dc.date.accessioned2025-09-09T00:16:38Z
dc.date.available2025-02-23T17:34:34Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ab0af1
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/80337
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectDispositivos optoeletrônicos
dc.subject.otherPhotomemory
dc.subject.otherMoS2
dc.subject.otherGate-tunable
dc.subject.otherPhotodoping
dc.titleGate-tunable non-volatile photomemory effect in MoS2 transistors
dc.typeArtigo de periódico
local.citation.epage8
local.citation.issue2
local.citation.spage1
local.citation.volume6
local.description.resumoNon-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS 2 transistors. The photomemory is based on a photodoping effect—a controlled way of manipulating the density of free charges in monolayer MoS 2 using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS 2 leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50% of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS 2 phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0003-3701-8119
local.identifier.orcidhttps://orcid.org/0000-0002-1467-3105
local.identifier.orcidhttps://orcid.org/0000-0002-8551-5948
local.identifier.orcidhttps://orcid.org/0000-0003-4777-7370
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ab0af1

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