Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures
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Universidade Federal de Minas Gerais
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Steady doping, added to its remarkable electronic properties, would make graphene a valuable
commodity in the solar cell market, as energy power conversion could be substantially increased. Here
we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-
type) up to n ~ 2.2 × 1013 cm−2 while providing excellent charge mobility (μ ~ 25 000 cm2 V−1 s−1
).
Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural
and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on
graphene-talc van der Waals heterostructures, which are investigated through the electronic properties
of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good
electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B = 0.4 T)
at T = 4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping,
we performed first-principles calculations of their interface structural and electronic properties. In
addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is
also a promising route towards controlling the band gap opening in bilayer graphene, promoting a
steady n or p type doping in graphene and, eventually, providing a new path to access superconducting
states in graphene, predicted to exist only at very high doping.
Abstract
Assunto
Grafeno, Heteroestrutura, Propriedades eletrônicas
Palavras-chave
Graphene heterostructure, High quality electronic properties, Talc
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https://iopscience.iop.org/article/10.1088/2053-1583/aa76f4/meta