Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

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dc.creatorEdrian Mania
dc.creatorAnanias Borges Alencar
dc.creatorAlisson Ronieri Cadore
dc.creatorBruno Ricardo de Carvalho
dc.creatorKenji Watanabe
dc.creatorTakashi Taniguchi
dc.creatorBernardo Ruegger Almeida Neves
dc.creatorHelio Chacham
dc.creatorLeonardo Cristiano Campos
dc.date.accessioned2025-02-23T16:26:05Z
dc.date.accessioned2025-09-09T00:42:04Z
dc.date.available2025-02-23T16:26:05Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1088/2053-1583/aa76f4
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/80326
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectGrafeno
dc.subjectHeteroestrutura
dc.subjectPropriedades eletrônicas
dc.subject.otherGraphene heterostructure
dc.subject.otherHigh quality electronic properties
dc.subject.otherTalc
dc.titleSpontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures
dc.typeArtigo de periódico
local.citation.epage7
local.citation.issue3
local.citation.spage1
local.citation.volume4
local.description.resumoSteady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p- type) up to n ~ 2.2 × 1013 cm−2 while providing excellent charge mobility (μ ~ 25 000 cm2 V−1 s−1 ). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B = 0.4 T) at T = 4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.
local.identifier.orcidhttps://orcid.org/0000-0002-9060-534X
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0003-3701-8119
local.identifier.orcidhttps://orcid.org/0000-0002-1467-3105
local.identifier.orcidhttps://orcid.org/0000-0003-0464-4754
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/aa76f4/meta

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