Low overhead in situ aging monitoring and proactive aging management
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Universidade Federal de Minas Gerais
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Post-Dennard scaling CMOS technologies suffer from considerable degradation due to increasing electrical fields caused by the lack of further reduction of the supply voltage. This aspect of aging is widely disregarded so far and cannot be addressed at design time by adding static margins anymore. Instead, it needs to be counteracted effectively at run time over the entire device lifetime. For this purpose, dynamic runtime approaches for aging management are required, relying on detailed in formation regarding the current system state. In this paper we propose a novel aging monitoring mechanism providing that crucial information at a marginal resource overhead. The current device degradation is measured via the aging-dependent delay variation, which can be quantified in situ with built-in tests exploiting the strictly monotonic relation between supply voltage and propagation delay. Furthermore, we suggest to utilize the information gained this way for a proactive aging-aware task mapping.
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Circuitos integrados, Circuitos eletrônicos, Circuitos de sinais mistos
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Design for Reliability, Proactive Management , Running Time , Supply Voltage , Propagation Delay , CMOS Technology , Current State Of The System , Map Tasks , Circuitry , Lookup Table , Specific Technology , Higher Layers , Technological Capabilities , Active Switches , Hot Electrons , Component Reliability , Regulatory Switch , Minimal Overhead , System Lifetime , Mean Time To Failure, Aging , Temperature measurement , Monitoring , Degradation , Delays , Propagation delay
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https://ieeexplore.ieee.org/document/7539174